NTMFS4C55NT1G
  • Share:

onsemi NTMFS4C55NT1G

Manufacturer No:
NTMFS4C55NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 78A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C55NT1G is a single N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in an SO-8 FL (Flat Lead) case, which is Pb-free, halogen-free, and RoHS compliant. It is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 21.7 A
Continuous Drain Current (TA = 80°C) ID 16.3 A
Pulsed Drain Current (tp = 10 μs) IDM 174 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 2.7 - 3.4
Gate Threshold Voltage VGS(TH) 1.3 - 2.2 V
Operating Junction Temperature TJ -55 to +150 °C
Lead Temperature for Soldering TL 260 °C

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • SO-8 FL (Flat Lead) package for enhanced thermal performance

Applications

  • CPU power delivery
  • DC-DC converters
  • Power management in various electronic systems
  • High-performance switching applications

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C55NT1G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 21.7 A at 25°C and 16.3 A at 80°C.

  3. What is the pulsed drain current for a pulse width of 10 μs?

    The pulsed drain current (IDM) is 174 A for a pulse width of 10 μs.

  4. What is the typical on-resistance at VGS = 10 V and ID = 30 A?

    The typical on-resistance (RDS(on)) is 2.7 - 3.4 mΩ at VGS = 10 V and ID = 30 A.

  5. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is 1.3 - 2.2 V.

  6. What are the operating junction and storage temperatures?

    The operating junction and storage temperatures range from -55°C to +150°C.

  7. Is the NTMFS4C55NT1G RoHS compliant?
  8. What package type is used for the NTMFS4C55NT1G?

    The NTMFS4C55NT1G is packaged in an SO-8 FL (Flat Lead) case.

  9. What are some typical applications for the NTMFS4C55NT1G?

    Typical applications include CPU power delivery, DC-DC converters, and high-performance switching applications.

  10. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$1.18
373

Please send RFQ , we will respond immediately.

Same Series
NTMFS4C55NT3G
NTMFS4C55NT3G
MOSFET N-CH 30V 11.9A/78A 5DFN

Similar Products

Part Number NTMFS4C55NT1G NTMFS4C59NT1G NTMFS4C55NT3G NTMFS4C56NT1G NTMFS4C58NT1G NTMFS4955NT1G NTMFS4C05NT1G NTMFS4C35NT1G NTMFS4C50NT1G NTMFS4C53NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Sanyo onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type - N-Channel N-Channel - - N-Channel N-Channel N-Channel - -
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) - - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) - 30 V 30 V - - 30 V 30 V 30 V - -
Current - Continuous Drain (Id) @ 25°C - 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc) - - 9.7A (Ta), 48A (Tc) 11.9A (Ta) 12.4A (Ta) 21.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V - - 4.5V, 10V 4.5V, 10V 4.5V, 10V - -
Rds On (Max) @ Id, Vgs - 5.8mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V - - 6mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 3.2mOhm @ 30A, 10V - -
Vgs(th) (Max) @ Id - 2.1V @ 250µA 2.2V @ 250µA - - 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs - 22.2 nC @ 10 V 30 nC @ 10 V - - 10.8 nC @ 4.5 V 14 nC @ 4.5 V 15 nC @ 4.5 V - -
Vgs (Max) - ±20V ±20V - - ±20V ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds - 1252 pF @ 15 V 1972 pF @ 15 V - - 1264 pF @ 15 V 1972 pF @ 15 V 2300 pF @ 15 V - -
FET Feature - - - - - - - - - -
Power Dissipation (Max) - 760mW (Ta) - - - 920mW (Ta), 23.2W (Tc) 770mW (Ta), 33W (Tc) 780mW (Ta), 33W (Tc) - -
Operating Temperature - -55°C ~ 150°C (TJ) - - - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package - 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case - 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN 8-PowerTDFN, 5 Leads

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP