NTMFS4C55NT1G
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onsemi NTMFS4C55NT1G

Manufacturer No:
NTMFS4C55NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 78A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C55NT1G is a single N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in an SO-8 FL (Flat Lead) case, which is Pb-free, halogen-free, and RoHS compliant. It is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 21.7 A
Continuous Drain Current (TA = 80°C) ID 16.3 A
Pulsed Drain Current (tp = 10 μs) IDM 174 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 2.7 - 3.4
Gate Threshold Voltage VGS(TH) 1.3 - 2.2 V
Operating Junction Temperature TJ -55 to +150 °C
Lead Temperature for Soldering TL 260 °C

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • SO-8 FL (Flat Lead) package for enhanced thermal performance

Applications

  • CPU power delivery
  • DC-DC converters
  • Power management in various electronic systems
  • High-performance switching applications

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C55NT1G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 21.7 A at 25°C and 16.3 A at 80°C.

  3. What is the pulsed drain current for a pulse width of 10 μs?

    The pulsed drain current (IDM) is 174 A for a pulse width of 10 μs.

  4. What is the typical on-resistance at VGS = 10 V and ID = 30 A?

    The typical on-resistance (RDS(on)) is 2.7 - 3.4 mΩ at VGS = 10 V and ID = 30 A.

  5. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is 1.3 - 2.2 V.

  6. What are the operating junction and storage temperatures?

    The operating junction and storage temperatures range from -55°C to +150°C.

  7. Is the NTMFS4C55NT1G RoHS compliant?
  8. What package type is used for the NTMFS4C55NT1G?

    The NTMFS4C55NT1G is packaged in an SO-8 FL (Flat Lead) case.

  9. What are some typical applications for the NTMFS4C55NT1G?

    Typical applications include CPU power delivery, DC-DC converters, and high-performance switching applications.

  10. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

$1.18
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Similar Products

Part Number NTMFS4C55NT1G NTMFS4C59NT1G NTMFS4C55NT3G NTMFS4C56NT1G NTMFS4C58NT1G NTMFS4955NT1G NTMFS4C05NT1G NTMFS4C35NT1G NTMFS4C50NT1G NTMFS4C53NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Sanyo onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type - N-Channel N-Channel - - N-Channel N-Channel N-Channel - -
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) - - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) - 30 V 30 V - - 30 V 30 V 30 V - -
Current - Continuous Drain (Id) @ 25°C - 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc) - - 9.7A (Ta), 48A (Tc) 11.9A (Ta) 12.4A (Ta) 21.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V - - 4.5V, 10V 4.5V, 10V 4.5V, 10V - -
Rds On (Max) @ Id, Vgs - 5.8mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V - - 6mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 3.2mOhm @ 30A, 10V - -
Vgs(th) (Max) @ Id - 2.1V @ 250µA 2.2V @ 250µA - - 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs - 22.2 nC @ 10 V 30 nC @ 10 V - - 10.8 nC @ 4.5 V 14 nC @ 4.5 V 15 nC @ 4.5 V - -
Vgs (Max) - ±20V ±20V - - ±20V ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds - 1252 pF @ 15 V 1972 pF @ 15 V - - 1264 pF @ 15 V 1972 pF @ 15 V 2300 pF @ 15 V - -
FET Feature - - - - - - - - - -
Power Dissipation (Max) - 760mW (Ta) - - - 920mW (Ta), 23.2W (Tc) 770mW (Ta), 33W (Tc) 780mW (Ta), 33W (Tc) - -
Operating Temperature - -55°C ~ 150°C (TJ) - - - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package - 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case - 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN 8-PowerTDFN, 5 Leads

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