NTMFS4C55NT1G
  • Share:

onsemi NTMFS4C55NT1G

Manufacturer No:
NTMFS4C55NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 78A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C55NT1G is a single N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in an SO-8 FL (Flat Lead) case, which is Pb-free, halogen-free, and RoHS compliant. It is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 21.7 A
Continuous Drain Current (TA = 80°C) ID 16.3 A
Pulsed Drain Current (tp = 10 μs) IDM 174 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 2.7 - 3.4
Gate Threshold Voltage VGS(TH) 1.3 - 2.2 V
Operating Junction Temperature TJ -55 to +150 °C
Lead Temperature for Soldering TL 260 °C

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • SO-8 FL (Flat Lead) package for enhanced thermal performance

Applications

  • CPU power delivery
  • DC-DC converters
  • Power management in various electronic systems
  • High-performance switching applications

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C55NT1G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 21.7 A at 25°C and 16.3 A at 80°C.

  3. What is the pulsed drain current for a pulse width of 10 μs?

    The pulsed drain current (IDM) is 174 A for a pulse width of 10 μs.

  4. What is the typical on-resistance at VGS = 10 V and ID = 30 A?

    The typical on-resistance (RDS(on)) is 2.7 - 3.4 mΩ at VGS = 10 V and ID = 30 A.

  5. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is 1.3 - 2.2 V.

  6. What are the operating junction and storage temperatures?

    The operating junction and storage temperatures range from -55°C to +150°C.

  7. Is the NTMFS4C55NT1G RoHS compliant?
  8. What package type is used for the NTMFS4C55NT1G?

    The NTMFS4C55NT1G is packaged in an SO-8 FL (Flat Lead) case.

  9. What are some typical applications for the NTMFS4C55NT1G?

    Typical applications include CPU power delivery, DC-DC converters, and high-performance switching applications.

  10. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

$1.18
373

Please send RFQ , we will respond immediately.

Same Series
NTMFS4C55NT3G
NTMFS4C55NT3G
MOSFET N-CH 30V 11.9A/78A 5DFN

Similar Products

Part Number NTMFS4C55NT1G NTMFS4C59NT1G NTMFS4C55NT3G NTMFS4C56NT1G NTMFS4C58NT1G NTMFS4955NT1G NTMFS4C05NT1G NTMFS4C35NT1G NTMFS4C50NT1G NTMFS4C53NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi Sanyo onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete Active Obsolete Active Obsolete
FET Type - N-Channel N-Channel - - N-Channel N-Channel N-Channel - -
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) - - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) - 30 V 30 V - - 30 V 30 V 30 V - -
Current - Continuous Drain (Id) @ 25°C - 9A (Ta), 52A (Tc) 11.9A (Ta), 78A (Tc) - - 9.7A (Ta), 48A (Tc) 11.9A (Ta) 12.4A (Ta) 21.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V - - 4.5V, 10V 4.5V, 10V 4.5V, 10V - -
Rds On (Max) @ Id, Vgs - 5.8mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V - - 6mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 3.2mOhm @ 30A, 10V - -
Vgs(th) (Max) @ Id - 2.1V @ 250µA 2.2V @ 250µA - - 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA - -
Gate Charge (Qg) (Max) @ Vgs - 22.2 nC @ 10 V 30 nC @ 10 V - - 10.8 nC @ 4.5 V 14 nC @ 4.5 V 15 nC @ 4.5 V - -
Vgs (Max) - ±20V ±20V - - ±20V ±20V ±20V - -
Input Capacitance (Ciss) (Max) @ Vds - 1252 pF @ 15 V 1972 pF @ 15 V - - 1264 pF @ 15 V 1972 pF @ 15 V 2300 pF @ 15 V - -
FET Feature - - - - - - - - - -
Power Dissipation (Max) - 760mW (Ta) - - - 920mW (Ta), 23.2W (Tc) 770mW (Ta), 33W (Tc) 780mW (Ta), 33W (Tc) - -
Operating Temperature - -55°C ~ 150°C (TJ) - - - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package - 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case - 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN 8-PowerTDFN, 5 Leads

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223