Overview
The NTMFS4955NT1G is a power, single N-channel MOSFET produced by onsemi. This device is packaged in an SO-8 FL (Pb-Free) format and is designed to offer high performance and reliability in various power management applications. It features low RDS(on) to minimize conduction losses, low capacitance to minimize driver losses, and optimized gate charge to minimize switching losses. The MOSFET is optimized for 5 V and 12 V gate drives, making it versatile for different system requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 16.7 | A |
| Continuous Drain Current (TA = 100°C) | ID | 10.5 | A |
| Power Dissipation (TA = 25°C) | PD | 2.70 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 210 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 4.5 - 5.6 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.2 | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Optimized for 5 V and 12 V gate drives
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
- High current capability with a maximum drain current of 48 A
- Low forward diode voltage and fast reverse recovery time
- High thermal performance with a junction-to-case thermal resistance of 5.4 °C/W
Applications
- CPU Power Delivery
- DC-DC Converters
- Power Management in High-Current Applications
- Switching Power Supplies
- Motor Control and Drive Systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4955NT1G MOSFET?
The maximum drain-to-source voltage is 30 V.
- What are the typical gate threshold voltage ranges for this MOSFET?
The gate threshold voltage ranges from 1.2 V to 2.2 V.
- What is the maximum continuous drain current at 25°C and 100°C?
The maximum continuous drain current is 16.7 A at 25°C and 10.5 A at 100°C.
- Is the NTMFS4955NT1G MOSFET RoHS compliant?
- What are the typical applications of the NTMFS4955NT1G MOSFET?
Typical applications include CPU power delivery, DC-DC converters, and power management in high-current applications.
- What is the junction-to-case thermal resistance of the NTMFS4955NT1G?
The junction-to-case thermal resistance is 5.4 °C/W.
- What is the maximum pulsed drain current for the NTMFS4955NT1G?
The maximum pulsed drain current is 210 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range for this MOSFET?
The operating junction and storage temperature range is from −55°C to +150°C.
- What are the key features that minimize losses in the NTMFS4955NT1G MOSFET?
The key features include low RDS(on), low capacitance, and optimized gate charge to minimize conduction, driver, and switching losses.
- How is the NTMFS4955NT1G packaged?
The NTMFS4955NT1G is packaged in an SO-8 FL (Pb-Free) format.
