onsemi NTMFS4925NT1G

Manufacturer No:: NTMFS4925NT1G
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 30V 9.7A/48A 5DFN
Delivery:
Payment:

Product Introduction

Overview

The NTMFS4925NT1G is a single N-Channel Power MOSFET produced by onsemi, designed for low to medium voltage applications. This MOSFET is packaged in a SO-8FL (Small Outline 8-lead Flip Chip) configuration, which offers a compact footprint suitable for various high-density power management systems. The device is characterized by its high current handling capability and low on-resistance, making it an ideal choice for power-intensive applications.

Key Specifications

Parameter	Value
Channel Polarity	N-Channel
Drain-Source Voltage (V_DSS)	30 V
Drain Current (I_D)	48 A
On-Resistance (R_DS(on)) @ V_GS = 10 V	5.6 mΩ
Gate-Source Threshold Voltage (V_GS(th))	2.2 V
Package Type	SO-8FL / DFN-5
Maximum Power Dissipation (P_D)	31 W
Typical Gate Charge (Q_g) @ V_GS = 4.5 V	10.8 nC
Typical Input Capacitance (C_iss)	1264 pF

Key Features

Low on-resistance (R_DS(on)) of 5.6 mΩ at V_GS = 10 V, ensuring minimal power loss.
High current handling capability of up to 48 A.
Low capacitance and optimized gate charge for efficient switching performance.
RoHS compliant, ensuring environmental sustainability.
Compact SO-8FL package suitable for high-density power management systems.

Applications

High Side Synchronous DC-DC Converters.
Vcore/GPUcore/VRM High Side Voltage Regulation.
Notebook Battery Management.
Notebook PC, Desktop PC, Server, Netcom, and Point of Load Modules.

Q & A

What is the maximum drain-source voltage of the NTMFS4925NT1G MOSFET?
The maximum drain-source voltage (V_DSS) is 30 V.
What is the maximum drain current of the NTMFS4925NT1G MOSFET?
The maximum drain current (I_D) is 48 A.
What is the on-resistance of the NTMFS4925NT1G MOSFET at V_GS = 10 V?
The on-resistance (R_DS(on)) at V_GS = 10 V is 5.6 mΩ.
What is the gate-source threshold voltage of the NTMFS4925NT1G MOSFET?
The gate-source threshold voltage (V_GS(th)) is 2.2 V.
In what package is the NTMFS4925NT1G MOSFET available?
The NTMFS4925NT1G MOSFET is available in the SO-8FL / DFN-5 package.
What are the typical applications of the NTMFS4925NT1G MOSFET?
Typical applications include high side synchronous DC-DC converters, Vcore/GPUcore/VRM high side voltage regulation, notebook battery management, and various computing and networking devices.
Is the NTMFS4925NT1G MOSFET RoHS compliant?
Yes, the NTMFS4925NT1G MOSFET is RoHS compliant.
What is the maximum power dissipation of the NTMFS4925NT1G MOSFET?
The maximum power dissipation (P_D) is 31 W.
What is the typical gate charge of the NTMFS4925NT1G MOSFET at V_GS = 4.5 V?
The typical gate charge (Q_g) at V_GS = 4.5 V is 10.8 nC.
Is the NTMFS4925NT1G MOSFET optimized for low capacitance?
Yes, the NTMFS4925NT1G MOSFET is optimized for low capacitance and efficient switching performance.

In Stock

UnitPrice: -

Quantity: 479

Please send RFQ , we will respond immediately.

Contact Name

Phone

Company

Country

Quantity

Same Series

Part Number	NTMFS4925NT1G	NTMFS4926NT1G	NTMFS4927NT1G	NTMFS4935NT1G	NTMFS4945NT1G	NTMFS4925NT3G	NTMFS4955NT1G	NTMFS4921NT1G	NTMFS4925NET1G
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta), 48A (Tc)	9A (Ta), 44A (Tc)	7.9A (Ta), 38A (Tc)	13A (Ta), 93A (Tc)	7.4A (Ta), 35A (Tc)	9.7A (Ta), 48A (Tc)	9.7A (Ta), 48A (Tc)	8.8A (Ta), 58.5A (Tc)	9.7A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 10V	4.5V, 11.5V	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V	7mOhm @ 30A, 10V	7.3mOhm @ 30A, 10V	3.2mOhm @ 30A, 10V	9mOhm @ 30A, 10V	5.6mOhm @ 30A, 10V	6mOhm @ 30A, 10V	6.95mOhm @ 30A, 10V	6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA	2.2V @ 250µA	2.2V @ 250µA	2.2V @ 250µA	2.2V @ 250µA	2.2V @ 250µA	2.2V @ 250µA	2.5V @ 250µA	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5 nC @ 10 V	17.3 nC @ 10 V	16 nC @ 10 V	49.4 nC @ 10 V	17.6 nC @ 10 V	21.5 nC @ 10 V	10.8 nC @ 4.5 V	25 nC @ 11.5 V	21.5 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1264 pF @ 15 V	1004 pF @ 15 V	913 pF @ 15 V	4850 pF @ 15 V	1205 pF @ 15 V	1264 pF @ 15 V	1264 pF @ 15 V	1400 pF @ 12 V	1264 pF @ 15 V
FET Feature	-	-	-	-	-	-	-	-	-
Power Dissipation (Max)	920mW (Ta), 23.2W (Tc)	920mW (Ta), 21.6W (Tc)	920mW (Ta), 20.8W (Tc)	930mW (Ta), 48W (Tc)	910mW (Ta), 19.8W (Tc)	920mW (Ta), 23.2W (Tc)	920mW (Ta), 23.2W (Tc)	870mW (Ta), 38.5W (Tc)	920mW (Ta), 23.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1264 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	920mW (Ta), 23.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

onsemi NTMFS4925NT1G

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

NTMFS4925NT3G

Similar Products

Related Product By Categories

NTLJF4156NT1G

FDMC2523P

PHT6NQ10T,135

FDY102PZ

NTMFS5C460NLT1G

STP8N120K5

FCH040N65S3-F155

NTMFS5C468NLT1G

NX7002AKVL

STH150N10F7-2

STP18N60M2

NTD3055L170T4

Related Product By Brand

MBRS140T3H

MJE5731AG

FDA28N50F

NTD3055L104

NCV33274ADR2G

MC14050BDTEL

LC709203FXE-01MH

FAN3224TMX-F085

AMIS30622C6227G

NCV8170AMX280TCG

MC33269DTRK-3.3

MC33375D-3.0