NTMFS4927NT1G
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onsemi NTMFS4927NT1G

Manufacturer No:
NTMFS4927NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.9A/38A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4927NT1G is a high-performance, low-voltage, dual N-channel MOSFET from onsemi. This device is designed to provide high efficiency and reliability in a variety of applications, including power management, DC-DC converters, and motor control. The NTMFS4927NT1G features advanced trench technology, which enhances its switching characteristics and reduces on-resistance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±12 V
ID (Continuous Drain Current) 23 A
RDS(ON) (On-Resistance) 3.5
PD (Power Dissipation) 150 W
TJ (Junction Temperature) -55 to 150 °C

Key Features

  • Low on-resistance (RDS(ON)) for high efficiency
  • High current capability (ID) for demanding applications
  • Advanced trench technology for improved switching performance
  • Low gate charge for reduced switching losses
  • RoHS compliant and halogen-free for environmental sustainability

Applications

  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Power management in consumer electronics and industrial systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS4927NT1G?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the on-resistance (RDS(ON)) of the NTMFS4927NT1G?

    The on-resistance (RDS(ON)) is 3.5 mΩ.

  3. What is the continuous drain current (ID) of the NTMFS4927NT1G?

    The continuous drain current (ID) is 23 A.

  4. What are the typical applications of the NTMFS4927NT1G?

    Typical applications include DC-DC converters, motor control systems, power management in consumer electronics, and automotive systems.

  5. Is the NTMFS4927NT1G RoHS compliant?

    Yes, the NTMFS4927NT1G is RoHS compliant and halogen-free.

  6. What is the junction temperature range of the NTMFS4927NT1G?

    The junction temperature range is -55°C to 150°C.

  7. What technology is used in the NTMFS4927NT1G to enhance its performance?

    The NTMFS4927NT1G uses advanced trench technology to enhance its switching characteristics and reduce on-resistance.

  8. How does the NTMFS4927NT1G contribute to energy efficiency in power management systems?

    The low on-resistance and high current capability of the NTMFS4927NT1G contribute to high efficiency and reduced power losses in power management systems.

  9. Can the NTMFS4927NT1G be used in automotive applications?

    Yes, the NTMFS4927NT1G is suitable for automotive applications due to its high reliability and efficiency.

  10. Where can I find detailed specifications and datasheets for the NTMFS4927NT1G?

    Detailed specifications and datasheets can be found on the official onsemi website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.9A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:913 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):920mW (Ta), 20.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$0.62
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Similar Products

Part Number NTMFS4927NT1G NTMFS4937NT1G NTMFS4927NT3G NTMFS4921NT1G NTMFS4925NT1G NTMFS4926NT1G NTMFS4927NCT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.9A (Ta), 38A (Tc) 10.2A (Ta), 70A (Tc) 7.9A (Ta), 38A (Tc) 8.8A (Ta), 58.5A (Tc) 9.7A (Ta), 48A (Tc) 9A (Ta), 44A (Tc) 7.9A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.3mOhm @ 30A, 10V 4mOhm @ 30A, 10V 7.3mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 5.6mOhm @ 30A, 10V 7mOhm @ 30A, 10V 7.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 31 nC @ 10 V 16 nC @ 10 V 25 nC @ 11.5 V 21.5 nC @ 10 V 17.3 nC @ 10 V 8 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 913 pF @ 15 V 2516 pF @ 15 V 913 pF @ 15 V 1400 pF @ 12 V 1264 pF @ 15 V 1004 pF @ 15 V 913 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 920mW (Ta), 20.8W (Tc) 920mW (Ta), 43W (Tc) 920mW (Ta), 20.8W (Tc) 870mW (Ta), 38.5W (Tc) 920mW (Ta), 23.2W (Tc) 920mW (Ta), 21.6W (Tc) 920mW (Ta), 20.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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