NTMFS4937NT1G
  • Share:

onsemi NTMFS4937NT1G

Manufacturer No:
NTMFS4937NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.2A/70A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4937NT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-channel MOSFET is packaged in an SO-8 FL (Flat Lead) package and is known for its low on-resistance (RDS(on)) and optimized gate charge, which minimize conduction and switching losses. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 17.1 A
Continuous Drain Current (TA = 100°C) ID 10.9 A
Pulsed Drain Current (tp = 10 μs) IDM 210 A
Power Dissipation (TA = 25°C) PD 2.6 W
Junction-to-Case Thermal Resistance RJC 2.9 °C/W
Gate Threshold Voltage VGS(TH) 1.32 - 2.2 V
Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) RDS(on) 3.2 - 4.0
Operating Junction and Storage Temperature TJ, TSTG -55 to +150 °C

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum drain current of 70 A
  • High pulse current capability up to 210 A
  • Low forward diode voltage and fast reverse recovery time

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • High-power switching applications
  • Power management systems
  • Automotive and industrial power systems

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTMFS4937NT1G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 17.1 A at 25°C and 10.9 A at 100°C.

  3. What is the pulsed drain current capability?

    The pulsed drain current capability is up to 210 A for a pulse width of 10 μs.

  4. What is the junction-to-case thermal resistance?

    The junction-to-case thermal resistance (RJC) is 2.9 °C/W.

  5. What are the key features of the NTMFS4937NT1G?

    The key features include low RDS(on), low capacitance, optimized gate charge, and being Pb-free, halogen-free, and RoHS compliant.

  6. What are the typical applications of the NTMFS4937NT1G?

    Typical applications include CPU power delivery, DC-DC converters, and high-power switching applications.

  7. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is from 1.32 V to 2.2 V.

  8. What is the maximum operating junction temperature?

    The maximum operating junction temperature is 150°C.

  9. Is the NTMFS4937NT1G RoHS compliant?

    Yes, the NTMFS4937NT1G is RoHS compliant.

  10. What is the package type of the NTMFS4937NT1G?

    The package type is SO-8 FL (Flat Lead).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2516 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):920mW (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$0.86
642

Please send RFQ , we will respond immediately.

Same Series
NTMFS4937NT3G
NTMFS4937NT3G
MOSFET N-CH 30V 10.2A/70A 5DFN

Similar Products

Part Number NTMFS4937NT1G NTMFS4937NT3G NTMFS4939NT1G NTMFS4837NT1G NTMFS4927NT1G NTMFS4931NT1G NTMFS4933NT1G NTMFS4934NT1G NTMFS4935NT1G NTMFS4936NT1G NTMFS4937NCT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 70A (Tc) 10.2A (Ta), 70A (Tc) 9.3A (Ta), 53A (Tc) 10A (Ta), 74A (Tc) 7.9A (Ta), 38A (Tc) 23A (Ta), 246A (Tc) 20A (Ta), 210A (Tc) 17.1A (Ta), 147A (Tc) 13A (Ta), 93A (Tc) 11.6A (Ta), 79A (Tc) 10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 5mOhm @ 30A, 10V 7.3mOhm @ 30A, 10V 1.1mOhm @ 30A, 10V 1.2mOhm @ 30A, 10V 2mOhm @ 30A, 10V 3.2mOhm @ 30A, 10V 3.8mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 31 nC @ 10 V 28.5 nC @ 10 V 22 nC @ 4.5 V 16 nC @ 10 V 128 nC @ 10 V 62.1 nC @ 4.5 V 34 nC @ 4.5 V 49.4 nC @ 10 V 43 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2516 pF @ 15 V 2516 pF @ 15 V 1954 pF @ 15 V 2048 pF @ 12 V 913 pF @ 15 V 9821 pF @ 15 V 10930 pF @ 15 V 5505 pF @ 15 V 4850 pF @ 15 V 3044 pF @ 15 V 2516 pF @ 15 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 920mW (Ta), 43W (Tc) 920mW (Ta), 43W (Tc) 920mW (Ta), 30W (Tc) 880mW (Ta), 47.2W (Tc) 920mW (Ta), 20.8W (Tc) 950mW (Ta) 1.06W (Ta), 104W (Tc) 930mW (Ta), 69.44W (Tc) 930mW (Ta), 48W (Tc) 920mW (Ta), 43W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD