Overview
The NTMFS4936NT1G is a power MOSFET from onsemi, designed for high-performance applications. This N-channel MOSFET is housed in an SO-8 FL package and is known for its low RDS(on), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. It features an enhanced body diode with soft recovery, providing Schottky-like performance. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 19.5 | A |
| Continuous Drain Current (TA = 100°C) | ID | 12.3 | A |
| Pulsed Drain Current (TA = 25°C, tp ≤ 10 s) | ID | 35 | A |
| Pulsed Drain Current (TA = 100°C, tp ≤ 10 s) | ID | 22 | A |
| Power Dissipation (TA = 25°C) | PD | 2.62 | W |
| Power Dissipation (TA = 25°C, tp ≤ 10 s) | PD | 8.4 | W |
| Maximum Junction Temperature | TJ | 150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 2.9 - 3.8 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.2 V | V |
Key Features
- Low RDS(on), low capacitance, and optimized gate charge to minimize conduction, driver, and switching losses.
- Next generation enhanced body diode with soft recovery, providing Schottky-like performance.
- Pb-free, halogen-free, and RoHS compliant.
- High current capability with a maximum drain current of up to 79 A.
- Wide operating junction temperature range from -55°C to 150°C.
- Low gate threshold voltage and high forward transconductance.
- Low inductance and resistance in the package parasitic values.
Applications
- CPU power delivery systems.
- DC-DC converters.
- High-power switching applications.
- Power management in automotive and industrial systems.
- Server and data center power supplies.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4936NT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 19.5 A at 25°C and 12.3 A at 100°C.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 2.9 - 3.8 mΩ at VGS = 10 V and ID = 30 A.
- Is the NTMFS4936NT1G MOSFET RoHS compliant?
Yes, the NTMFS4936NT1G is Pb-free, halogen-free, and RoHS compliant.
- What are the typical applications of the NTMFS4936NT1G MOSFET?
Typical applications include CPU power delivery, DC-DC converters, and high-power switching in automotive and industrial systems.
- What is the maximum junction temperature of the MOSFET?
The maximum junction temperature (TJ) is 150°C.
- What is the gate threshold voltage range of the NTMFS4936NT1G?
The gate threshold voltage (VGS(TH)) range is 1.2 - 2.2 V.
- How does the enhanced body diode of the NTMFS4936NT1G perform?
The enhanced body diode has soft recovery, providing Schottky-like performance.
- What is the package type of the NTMFS4936NT1G MOSFET?
The package type is SO-8 FL.
- What are the thermal resistance values for the NTMFS4936NT1G?
The junction-to-case thermal resistance (RθJC) is 2.9 °C/W, and the junction-to-ambient thermal resistance (RθJA) varies depending on the mounting conditions.
