Overview
The NTMFS4946NT1G is a power, single, N-channel MOSFET produced by onsemi. This device is packaged in a thermally enhanced SO-8 FL package, which is lead-free. It is designed to minimize conduction, driver, and switching losses, making it highly efficient for various power management applications. The MOSFET features low RDS(on), low capacitance, and optimized gate charge, ensuring high performance and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 20.3 | A |
| Continuous Drain Current (TA = 85°C) | ID | 14.6 | A |
| Power Dissipation (TA = 25°C) | PD | 2.25 | W |
| Pulsed Drain Current (tp = 10 μs, TA = 25°C) | IDM | 200 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 2.5 - 3.4 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.45 - 2.5 | V |
| Total Gate Charge (VGS = 4.5 V, VDS = 15 V, ID = 30 A) | QG(TOT) | 21.8 - 32 | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Thermally enhanced SO-8 FL package for improved heat dissipation
- Pb-free device, compliant with environmental regulations
- High continuous and pulsed drain current capabilities
- Wide operating junction and storage temperature range
- Low gate threshold voltage and total gate charge
Applications
- CPU Power Delivery
- DC-DC Converters
- Low Side Switching
- Power Management in various electronic systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4946NT1G MOSFET?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 20.3 A at 25°C and 14.6 A at 85°C.
- What is the power dissipation at 25°C?
The power dissipation is 2.25 W at 25°C.
- What is the pulsed drain current for a pulse width of 10 μs at 25°C?
The pulsed drain current is 200 A for a pulse width of 10 μs at 25°C.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +150 °C.
- What is the typical drain-to-source on resistance at VGS = 10 V and ID = 30 A?
The typical drain-to-source on resistance is 2.5 - 3.4 mΩ.
- What are the typical applications of the NTMFS4946NT1G MOSFET?
The typical applications include CPU Power Delivery, DC-DC Converters, and Low Side Switching.
- Is the NTMFS4946NT1G MOSFET Pb-free?
Yes, the NTMFS4946NT1G MOSFET is Pb-free.
- What is the gate threshold voltage range?
The gate threshold voltage range is 1.45 - 2.5 V.
- What is the total gate charge at VGS = 4.5 V, VDS = 15 V, and ID = 30 A?
The total gate charge is 21.8 - 32 nC.
