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NTMFS4941NT1G
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onsemi NTMFS4941NT1G

Manufacturer No:
NTMFS4941NT1G
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 30V 9A SO8FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4941NT1G is a high-performance, N-channel power MOSFET produced by onsemi. This device is designed to offer high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a SO-8 FL (Small Outline 8-lead Flip-Lead) package, which provides excellent thermal performance and a compact footprint.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)47 A
RDS(ON) (On-Resistance at 10 V, 15 A)4.7 mΩ
PD (Maximum Power Dissipation)25.5 W
VGS(TH) (Threshold Voltage at 250 μA)1.67 V
PackageSO-8 FL

Key Features

  • High current handling capability of up to 47 A.
  • Low on-resistance of 4.7 mΩ at 10 V, 15 A.
  • Maximum power dissipation of 25.5 W.
  • Compact SO-8 FL package for improved thermal performance.
  • RoHS compliant.

Applications

The NTMFS4941NT1G is versatile and can be used in various applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial power systems.
  • High-power audio amplifiers.

Q & A

  1. What is the maximum drain-source voltage of the NTMFS4941NT1G?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current rating of the NTMFS4941NT1G?
    The continuous drain current rating is 47 A.
  3. What is the on-resistance of the NTMFS4941NT1G at 10 V, 15 A?
    The on-resistance is 4.7 mΩ at 10 V, 15 A.
  4. What is the maximum power dissipation of the NTMFS4941NT1G?
    The maximum power dissipation is 25.5 W.
  5. What is the threshold voltage of the NTMFS4941NT1G at 250 μA?
    The threshold voltage is 1.67 V at 250 μA.
  6. In what package is the NTMFS4941NT1G available?
    The NTMFS4941NT1G is available in a SO-8 FL package.
  7. Is the NTMFS4941NT1G RoHS compliant?
    Yes, the NTMFS4941NT1G is RoHS compliant.
  8. What are some common applications for the NTMFS4941NT1G?
    Common applications include power management and switching circuits, DC-DC converters, motor control, automotive and industrial power systems, and high-power audio amplifiers.
  9. Where can I find detailed specifications for the NTMFS4941NT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser and LCSC.
  10. What is the typical use case for the SO-8 FL package of the NTMFS4941NT1G?
    The SO-8 FL package is used for applications requiring high thermal performance and a compact footprint.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number NTMFS4941NT1G NTMFS4945NT1G NTMFS4941NT3G NTMFS4943NT1G NTMFS4946NT1G NTMFS4841NT1G NTMFS4921NT1G NTMFS4931NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C - 7.4A (Ta), 35A (Tc) 9A (Ta), 47A (Tc) 8.3A (Ta), 41A (Tc) 12.7A (Ta), 100A (Tc) 8.3A (Ta), 57A (Tc) 8.8A (Ta), 58.5A (Tc) 23A (Ta), 246A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs - 9mOhm @ 30A, 10V 6.2mOhm @ 30A, 10V 7.2mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 7mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id - 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 17.6 nC @ 10 V 25.5 nC @ 10 V 20.9 nC @ 10 V 53 nC @ 11.5 V 17 nC @ 4.5 V 25 nC @ 11.5 V 128 nC @ 10 V
Vgs (Max) - ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1205 pF @ 15 V 1650 pF @ 15 V 1401 pF @ 15 V 3250 pF @ 12 V 1436 pF @ 12 V 1400 pF @ 12 V 9821 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) - 910mW (Ta), 19.8W (Tc) 910mW (Ta), 25.5W (Tc) 910mW (Ta), 22.3W (Tc) 890mW (Ta), 55.5W (Tc) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 38.5W (Tc) 950mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package - 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case - 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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