NTMFS4921NT1G
  • Share:

onsemi NTMFS4921NT1G

Manufacturer No:
NTMFS4921NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.8A/58.5A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4921NT1G is a high-performance Power MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. The MOSFET features a single N-channel configuration and is packaged in a SO-8FL (Pb-Free) package, making it suitable for use in environments where lead-free components are required.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)13.8 A
Drain-Source Resistance (Rds On)10.8 mOhms
Gate Threshold Voltage (Vgs th)Typical values provided in datasheet
Package TypeSO-8FL (Pb-Free)

Key Features

  • High drain current capability of up to 13.8 A, making it suitable for high-power applications.
  • Low drain-source resistance (Rds On) of 10.8 mOhms, which enhances efficiency and reduces power losses.
  • Single N-channel configuration for simplicity and reliability in circuit design.
  • Pb-Free SO-8FL package, compliant with environmental regulations and suitable for a wide range of applications.

Applications

The NTMFS4921NT1G Power MOSFET is versatile and can be used in various power management and control applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and amplification circuits.
  • Automotive and industrial control systems.

Q & A

  1. What is the drain-source breakdown voltage of the NTMFS4921NT1G?
    The drain-source breakdown voltage (Vds) is 30 V.
  2. What is the continuous drain current rating of the NTMFS4921NT1G?
    The continuous drain current (Id) is 13.8 A.
  3. What is the typical drain-source resistance (Rds On) of the NTMFS4921NT1G?
    The typical drain-source resistance (Rds On) is 10.8 mOhms.
  4. In what package is the NTMFS4921NT1G available?
    The NTMFS4921NT1G is available in a SO-8FL (Pb-Free) package.
  5. What are some common applications for the NTMFS4921NT1G?
    Common applications include power supplies, motor control systems, switching and amplification circuits, and automotive and industrial control systems.
  6. Is the NTMFS4921NT1G lead-free?
    Yes, the NTMFS4921NT1G is lead-free and packaged in a Pb-Free SO-8FL package.
  7. What is the gate threshold voltage (Vgs th) of the NTMFS4921NT1G?
    The gate threshold voltage (Vgs th) is provided in the datasheet and can vary based on specific conditions.
  8. Can the NTMFS4921NT1G be used in high-power applications?
    Yes, the NTMFS4921NT1G is suitable for high-power applications due to its high drain current capability and low Rds On.
  9. Where can I find detailed specifications for the NTMFS4921NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Octopart.
  10. Is the NTMFS4921NT1G available for purchase through major electronics distributors?
    Yes, the NTMFS4921NT1G is available for purchase through major electronics distributors such as Mouser and Octopart.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):870mW (Ta), 38.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

-
442

Please send RFQ , we will respond immediately.

Same Series
NTMFS4921NT3G
NTMFS4921NT3G
MOSFET N-CH 30V 8.8A/58.5A 5DFN

Similar Products

Part Number NTMFS4921NT1G NTMFS4926NT1G NTMFS4927NT1G NTMFS4921NT3G NTMFS4925NT1G NTMFS4931NT1G NTMFS4941NT1G NTMFS4121NT1G NTMFS4821NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V - 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 58.5A (Tc) 9A (Ta), 44A (Tc) 7.9A (Ta), 38A (Tc) 8.8A (Ta), 58.5A (Tc) 9.7A (Ta), 48A (Tc) 23A (Ta), 246A (Tc) - 11A (Ta) 8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V 7mOhm @ 30A, 10V 7.3mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 5.6mOhm @ 30A, 10V 1.1mOhm @ 30A, 10V - 5.25mOhm @ 24A, 10V 6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA - 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 11.5 V 17.3 nC @ 10 V 16 nC @ 10 V 25 nC @ 11.5 V 21.5 nC @ 10 V 128 nC @ 10 V - 40 nC @ 4.5 V 16 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 12 V 1004 pF @ 15 V 913 pF @ 15 V 1400 pF @ 12 V 1264 pF @ 15 V 9821 pF @ 15 V - 2700 pF @ 24 V 1400 pF @ 12 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 870mW (Ta), 38.5W (Tc) 920mW (Ta), 21.6W (Tc) 920mW (Ta), 20.8W (Tc) 870mW (Ta), 38.5W (Tc) 920mW (Ta), 23.2W (Tc) 950mW (Ta) - 900mW (Ta) 870mW (Ta), 38.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) - 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads - 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE