NTMFS4821NT1G
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onsemi NTMFS4821NT1G

Manufacturer No:
NTMFS4821NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.8A/58.5A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4821NT1G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to provide excellent switching characteristics and high efficiency, making it suitable for a variety of power management applications. The MOSFET is packaged in an SO-8FL (Pb-Free) package, which is compact and lead-free, adhering to environmental standards.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)10 A
RDS(ON) (On-Resistance)4.2 mΩ (Typical at VGS = 10 V)
PD (Power Dissipation)2.5 W
TJ (Junction Temperature)-55°C to 150°C
PackageSO-8FL (Pb-Free)

Key Features

  • High efficiency and low on-resistance (RDS(ON)) for reduced power losses.
  • Compact SO-8FL package, which is lead-free and environmentally friendly.
  • High continuous drain current (ID) of 10 A, suitable for demanding applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Low thermal resistance, enhancing heat dissipation.

Applications

The NTMFS4821NT1G MOSFET is versatile and can be used in various power management and switching applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial power systems.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS4821NT1G?
    The maximum drain-source voltage is 30 V.
  2. What is the typical on-resistance (RDS(ON)) of the NTMFS4821NT1G?
    The typical on-resistance is 4.2 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) of the NTMFS4821NT1G?
    The continuous drain current is 10 A.
  4. What is the package type of the NTMFS4821NT1G?
    The package type is SO-8FL (Pb-Free).
  5. What is the operating temperature range of the NTMFS4821NT1G?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications of the NTMFS4821NT1G?
    Common applications include DC-DC converters, motor control systems, power amplifiers, automotive and industrial power systems, and renewable energy systems.
  7. Is the NTMFS4821NT1G lead-free?
    Yes, the NTMFS4821NT1G is lead-free.
  8. What is the power dissipation (PD) of the NTMFS4821NT1G?
    The power dissipation is 2.5 W.
  9. Can the NTMFS4821NT1G be used in high-frequency applications?
    Yes, the NTMFS4821NT1G is suitable for high-frequency applications due to its low on-resistance and high efficiency.
  10. Where can I find detailed specifications for the NTMFS4821NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):870mW (Ta), 38.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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MOSFET N-CH 30V 8.8A/58.5A 5DFN

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Part Number NTMFS4821NT1G NTMFS4821NT3G NTMFS4851NT1G NTMFS4921NT1G NTMFS4823NT1G NTMFS4841NT1G NTMFS4121NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 58.5A (Tc) 8.8A (Ta), 58.5A (Tc) 9.5A (Ta), 66A (Tc) 8.8A (Ta), 58.5A (Tc) 6.9A (Ta), 30A (Tc) 8.3A (Ta), 57A (Tc) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 10.6mOhm @ 30A, 10V 7mOhm @ 30A, 10V 5.25mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V 16 nC @ 4.5 V 20 nC @ 4.5 V 25 nC @ 11.5 V 13 nC @ 11.5 V 17 nC @ 4.5 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 12 V 1400 pF @ 12 V 1850 pF @ 12 V 1400 pF @ 12 V 795 pF @ 15 V 1436 pF @ 12 V 2700 pF @ 24 V
FET Feature - - - - - - -
Power Dissipation (Max) 870mW (Ta), 38.5W (Tc) 870mW (Ta), 38.5W (Tc) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 38.5W (Tc) 860mW (Ta), 32.5W (Tc) 870mW (Ta), 41.7W (Tc) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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