NTMFS4821NT1G
  • Share:

onsemi NTMFS4821NT1G

Manufacturer No:
NTMFS4821NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.8A/58.5A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4821NT1G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to provide excellent switching characteristics and high efficiency, making it suitable for a variety of power management applications. The MOSFET is packaged in an SO-8FL (Pb-Free) package, which is compact and lead-free, adhering to environmental standards.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±12 V
ID (Continuous Drain Current)10 A
RDS(ON) (On-Resistance)4.2 mΩ (Typical at VGS = 10 V)
PD (Power Dissipation)2.5 W
TJ (Junction Temperature)-55°C to 150°C
PackageSO-8FL (Pb-Free)

Key Features

  • High efficiency and low on-resistance (RDS(ON)) for reduced power losses.
  • Compact SO-8FL package, which is lead-free and environmentally friendly.
  • High continuous drain current (ID) of 10 A, suitable for demanding applications.
  • Wide operating temperature range from -55°C to 150°C.
  • Low thermal resistance, enhancing heat dissipation.

Applications

The NTMFS4821NT1G MOSFET is versatile and can be used in various power management and switching applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Power amplifiers and audio systems.
  • Automotive and industrial power systems.
  • Renewable energy systems such as solar and wind power.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMFS4821NT1G?
    The maximum drain-source voltage is 30 V.
  2. What is the typical on-resistance (RDS(ON)) of the NTMFS4821NT1G?
    The typical on-resistance is 4.2 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) of the NTMFS4821NT1G?
    The continuous drain current is 10 A.
  4. What is the package type of the NTMFS4821NT1G?
    The package type is SO-8FL (Pb-Free).
  5. What is the operating temperature range of the NTMFS4821NT1G?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications of the NTMFS4821NT1G?
    Common applications include DC-DC converters, motor control systems, power amplifiers, automotive and industrial power systems, and renewable energy systems.
  7. Is the NTMFS4821NT1G lead-free?
    Yes, the NTMFS4821NT1G is lead-free.
  8. What is the power dissipation (PD) of the NTMFS4821NT1G?
    The power dissipation is 2.5 W.
  9. Can the NTMFS4821NT1G be used in high-frequency applications?
    Yes, the NTMFS4821NT1G is suitable for high-frequency applications due to its low on-resistance and high efficiency.
  10. Where can I find detailed specifications for the NTMFS4821NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.95mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):870mW (Ta), 38.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$0.70
593

Please send RFQ , we will respond immediately.

Same Series
NTMFS4821NT3G
NTMFS4821NT3G
MOSFET N-CH 30V 8.8A/58.5A 5DFN

Similar Products

Part Number NTMFS4821NT1G NTMFS4821NT3G NTMFS4851NT1G NTMFS4921NT1G NTMFS4823NT1G NTMFS4841NT1G NTMFS4121NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 58.5A (Tc) 8.8A (Ta), 58.5A (Tc) 9.5A (Ta), 66A (Tc) 8.8A (Ta), 58.5A (Tc) 6.9A (Ta), 30A (Tc) 8.3A (Ta), 57A (Tc) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.95mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 5.9mOhm @ 30A, 10V 6.95mOhm @ 30A, 10V 10.6mOhm @ 30A, 10V 7mOhm @ 30A, 10V 5.25mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V 16 nC @ 4.5 V 20 nC @ 4.5 V 25 nC @ 11.5 V 13 nC @ 11.5 V 17 nC @ 4.5 V 40 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 12 V 1400 pF @ 12 V 1850 pF @ 12 V 1400 pF @ 12 V 795 pF @ 15 V 1436 pF @ 12 V 2700 pF @ 24 V
FET Feature - - - - - - -
Power Dissipation (Max) 870mW (Ta), 38.5W (Tc) 870mW (Ta), 38.5W (Tc) 870mW (Ta), 41.7W (Tc) 870mW (Ta), 38.5W (Tc) 860mW (Ta), 32.5W (Tc) 870mW (Ta), 41.7W (Tc) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN