Overview
The NTMFS4935NT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is packaged in an SO-8 FL (Flat Lead) case and is designed to offer low conduction losses, minimal driver losses, and optimized switching performance. It is RoHS compliant, Pb-free, and halogen-free, making it suitable for a wide range of applications that require high reliability and environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 21.8 | A |
| Continuous Drain Current (TA = 100°C) | ID | 13.8 | A |
| Power Dissipation (TA = 25°C) | PD | 2.63 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 275 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 2.7 - 3.2 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.2 | V |
| Junction-to-Case Thermal Resistance | RJC | 2.6 | °C/W |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High continuous drain current up to 93 A (TC = 25°C)
- High pulsed drain current up to 275 A (tp = 10 μs)
- Low forward diode voltage (VSD) of 0.85 V at IS = 30 A
- Fast switching times with turn-on delay time (td(ON)) of 11.2 ns and turn-off delay time (td(OFF)) of 28.3 ns
Applications
- CPU power delivery
- DC-DC converters
- High-power switching applications
- Power management systems requiring high efficiency and reliability
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS4935NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 21.8 A at 25°C and 13.8 A at 100°C.
- What is the power dissipation at 25°C?
The power dissipation at 25°C is 2.63 W.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current is up to 275 A for a pulse width of 10 μs.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from −55°C to +150°C.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 30 A?
The typical drain-to-source on resistance (RDS(on)) is 2.7 - 3.2 mΩ.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.2 - 2.2 V.
- What is the junction-to-case thermal resistance (RJC)?
The junction-to-case thermal resistance (RJC) is 2.6 °C/W.
- Is the NTMFS4935NT1G RoHS compliant?
Yes, the NTMFS4935NT1G is RoHS compliant, Pb-free, and halogen-free.
- What are some typical applications for the NTMFS4935NT1G?
Typical applications include CPU power delivery, DC-DC converters, and high-power switching applications.
