STP5NK50ZFP
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STMicroelectronics STP5NK50ZFP

Manufacturer No:
STP5NK50ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 4.4A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP5NK50ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the PowerMESH™ family, optimized for high performance and reliability in demanding applications. The STP5NK50ZFP is available in the TO-220FP package, which offers excellent thermal and electrical characteristics. It is designed to minimize on-resistance and enhance dv/dt capability, making it suitable for a wide range of switching applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 500 V
Gate-source voltage (VGS) ±30 V
Continuous drain current (ID) at TC = 25 °C 4.4 A
Continuous drain current (ID) at TC = 100 °C 2.7 A
Pulsed drain current (IDM) 17.6 A
Total dissipation at TC = 25 °C (PTOT) 70 W
Operating junction temperature range (Tj) -55 to 150 °C
Thermal resistance junction-case (Rthj-case) 1.78 °C/W
Thermal resistance junction-ambient (Rthj-amb) 100 °C/W
On-resistance (RDS(on)) 1.22 Ω (typ.) Ω
Drain-source breakdown voltage (V(BR)DSS) 500 V V

Key Features

  • High-voltage N-channel Power MOSFET with 500 V drain-source voltage rating.
  • Low on-resistance (RDS(on)) of 1.22 Ω (typ.).
  • High continuous drain current of 4.4 A at TC = 25 °C.
  • 100% avalanche tested.
  • Minimized gate charge and very low intrinsic capacitance.
  • Zener-protected gate-source for enhanced ESD performance.
  • Available in TO-220FP package for good thermal and electrical performance.
  • ECOPACK® compliant packages for environmental sustainability.

Applications

The STP5NK50ZFP is designed for various high-performance switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-frequency switching circuits.
  • Aerospace and defense applications requiring high reliability.

Q & A

  1. What is the maximum drain-source voltage rating of the STP5NK50ZFP?

    The maximum drain-source voltage rating is 500 V.

  2. What is the typical on-resistance (RDS(on)) of the STP5NK50ZFP?

    The typical on-resistance is 1.22 Ω.

  3. What is the continuous drain current rating at TC = 25 °C?

    The continuous drain current rating at TC = 25 °C is 4.4 A.

  4. What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?

    The thermal resistance junction-case is 1.78 °C/W.

  5. Does the STP5NK50ZFP have built-in ESD protection?

    Yes, it has built-in Zener-protected gate-source for enhanced ESD performance.

  6. In which package is the STP5NK50ZFP available?

    The STP5NK50ZFP is available in the TO-220FP package.

  7. What is the operating junction temperature range for the STP5NK50ZFP?

    The operating junction temperature range is -55 to 150 °C.

  8. Is the STP5NK50ZFP compliant with environmental standards?

    Yes, it is available in ECOPACK® compliant packages.

  9. What are some typical applications for the STP5NK50ZFP?

    Typical applications include power supplies, motor control, industrial automation, high-frequency switching circuits, and aerospace applications.

  10. What is the maximum pulsed drain current (IDM) rating?

    The maximum pulsed drain current rating is 17.6 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STP5NK50ZFP STP5NK80ZFP STP5NK60ZFP STP4NK50ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 800 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) 4.3A (Tc) 5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V 2.4Ohm @ 2.15A, 10V 1.6Ohm @ 2.5A, 10V 2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 45.5 nC @ 10 V 34 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V 910 pF @ 25 V 690 pF @ 25 V 310 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 30W (Tc) 25W (Tc) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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