STP4NK50ZFP
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STMicroelectronics STP4NK50ZFP

Manufacturer No:
STP4NK50ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 3A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP4NK50ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for high-voltage applications, offering exceptional dv/dt capability and low on-resistance. The STP4NK50ZFP is designed with built-in Zener diodes to enhance ESD protection and absorb voltage transients, making it suitable for demanding environments. It is available in the TO-220FP package, which is lead-free and compliant with ECOPACK® standards for environmental sustainability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 500 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 14 A
Pulsed Drain Current (IDM) 48 A
Total Dissipation at TC = 25°C 35 W
Static Drain-Source On Resistance (RDS(on)) <0.38 Ω
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Thermal Resistance Junction-Case (Rthj-case) 0.83 °C/W
Maximum Junction Temperature (TJ) 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under high-stress conditions.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances to reduce switching losses.
  • Built-in back-to-back Zener diodes for enhanced ESD protection and to absorb voltage transients.
  • Low on-resistance (RDS(on)) of less than 0.38 Ω.
  • Good manufacturing repeatability.
  • Lead-free ECOPACK® packaging for environmental sustainability.

Applications

  • Switching applications, particularly in high-voltage environments.
  • Flyback converters and other power supply circuits.
  • LED lighting systems requiring high reliability and efficiency.
  • Industrial and automotive applications where high dv/dt capability is necessary.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP4NK50ZFP?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current (ID) at 25°C for the STP4NK50ZFP?

    The continuous drain current (ID) at 25°C is 14 A.

  3. What is the total dissipation at 25°C for the STP4NK50ZFP in TO-220FP package?

    The total dissipation at 25°C is 35 W.

  4. Does the STP4NK50ZFP have built-in ESD protection?
  5. What is the typical on-resistance (RDS(on)) of the STP4NK50ZFP?

    The typical on-resistance (RDS(on)) is less than 0.38 Ω.

  6. What are the common applications of the STP4NK50ZFP?
  7. What is the maximum junction temperature (TJ) for the STP4NK50ZFP?

    The maximum junction temperature (TJ) is 150°C.

  8. Is the STP4NK50ZFP available in lead-free packaging?
  9. What is the gate threshold voltage (VGS(th)) range for the STP4NK50ZFP?

    The gate threshold voltage (VGS(th)) range is 3 to 4.5 V.

  10. What is the thermal resistance junction-case (Rthj-case) for the STP4NK50ZFP?

    The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):20W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP4NK50Z
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STP4NK50ZFP
STP4NK50ZFP
MOSFET N-CH 500V 3A TO220FP
STD4NK50Z-1
STD4NK50Z-1
MOSFET N-CH 500V 3A IPAK

Similar Products

Part Number STP4NK50ZFP STP5NK50ZFP STP4NK60ZFP STP4NK80ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4.4A (Tc) 4A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.5A, 10V 1.5Ohm @ 2.2A, 10V 2Ohm @ 2A, 10V 3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 28 nC @ 10 V 26 nC @ 10 V 22.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 535 pF @ 25 V 510 pF @ 25 V 575 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 20W (Tc) 70W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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