STP4NK60ZFP
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STMicroelectronics STP4NK60ZFP

Manufacturer No:
STP4NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 4A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP4NK60ZFP is an N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer a significant reduction in on-resistance and high dv/dt capability, making it suitable for demanding applications. It is available in TO-220 and TO-220FP packages, ensuring high electrical and thermal efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)1.7 Ω (typ.)
ID (Drain Current)4 A
PD (Power Dissipation)25 W
PackageTO-220, TO-220FP
Operating Temperature-55°C to 150°C
RoHS ComplianceEcopack2

Key Features

  • 100% avalanche tested
  • Very low intrinsic capacitances
  • Zener-protected
  • High dv/dt capability
  • SuperMESH™ technology for reduced on-resistance

Applications

The STP4NK60ZFP is suitable for various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial and Automotive systems

Q & A

  1. What is the drain-source voltage rating of the STP4NK60ZFP?
    The drain-source voltage rating is 600 V.
  2. What is the typical on-resistance of the STP4NK60ZFP?
    The typical on-resistance is 1.7 Ω.
  3. What is the maximum drain current of the STP4NK60ZFP?
    The maximum drain current is 4 A.
  4. In which packages is the STP4NK60ZFP available?
    The STP4NK60ZFP is available in TO-220 and TO-220FP packages.
  5. What technology is used in the STP4NK60ZFP?
    The STP4NK60ZFP uses STMicroelectronics' SuperMESH™ technology.
  6. Is the STP4NK60ZFP RoHS compliant?
    Yes, the STP4NK60ZFP is RoHS compliant with an Ecopack2 grade.
  7. What are the operating temperature ranges for the STP4NK60ZFP?
    The operating temperature ranges from -55°C to 150°C.
  8. What are some common applications for the STP4NK60ZFP?
    Common applications include SMPS, data centers, solar microinverters, and industrial and automotive systems.
  9. Is the STP4NK60ZFP Zener-protected?
    Yes, the STP4NK60ZFP is Zener-protected.
  10. Where can I find EDA symbols, footprints, and 3D models for the STP4NK60ZFP?
    You can find these resources on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP4NK60Z
STP4NK60Z
MOSFET N-CH 600V 4A TO220AB

Similar Products

Part Number STP4NK60ZFP STP6NK60ZFP STP4NK80ZFP STP5NK60ZFP STP3NK60ZFP STP4NK50ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs Active Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 6A (Tc) 3A (Tc) 5A (Tc) 2.4A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V 3.5Ohm @ 1.5A, 10V 1.6Ohm @ 2.5A, 10V 3.6Ohm @ 1.2A, 10V 2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 46 nC @ 10 V 22.5 nC @ 10 V 34 nC @ 10 V 11.8 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V 905 pF @ 25 V 575 pF @ 25 V 690 pF @ 25 V 311 pF @ 25 V 310 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 25W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 20W (Tc) 20W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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