STP6NK60ZFP
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STMicroelectronics STP6NK60ZFP

Manufacturer No:
STP6NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 6A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP6NK60ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. It is designed for demanding switching applications and features integrated Zener diodes for gate-source protection, eliminating the need for external components.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25 °C6A
Drain Current (ID) at TC = 100 °C3.8A
Pulse Drain Current (IDM)24A
Total Dissipation at TC = 25 °C30W
On-Resistance (RDS(on))< 1.2Ω
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Operating Junction Temperature (Tj)-55 to 150°C
Storage Temperature (Tstg)-55 to 150°C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Integrated Zener diodes for gate-source protection, reducing the need for external components.
  • Available in TO-220FP package, suitable for various mounting and soldering processes.

Applications

The STP6NK60ZFP is ideal for a variety of switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive electronics.

Q & A

  1. What is the maximum drain-source voltage of the STP6NK60ZFP?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current (ID) at 25 °C is 6 A.
  3. What is the total dissipation at 25 °C for the TO-220FP package?
    The total dissipation at 25 °C for the TO-220FP package is 30 W.
  4. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 4.2 °C/W.
  5. Does the STP6NK60ZFP have built-in protection diodes?
    Yes, it has integrated Zener diodes for gate-source protection.
  6. What are the typical applications of the STP6NK60ZFP?
    It is used in power supplies, DC-DC converters, motor control, high-frequency switching circuits, and various industrial and automotive electronics.
  7. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150 °C.
  8. What is the storage temperature range?
    The storage temperature range (Tstg) is -55 to 150 °C.
  9. What package types are available for the STP6NK60ZFP?
    The STP6NK60ZFP is available in the TO-220FP package.
  10. Is the STP6NK60ZFP 100% avalanche tested?
    Yes, it is 100% avalanche tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STP6NK60ZFP STP6NK90ZFP STP9NK60ZFP STP4NK60ZFP STP5NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 900 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5.8A (Tc) 7A (Tc) 4A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 2Ohm @ 2.9A, 10V 950mOhm @ 3.5A, 10V 2Ohm @ 2A, 10V 1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 60.5 nC @ 10 V 53 nC @ 10 V 26 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 1350 pF @ 25 V 1110 pF @ 25 V 510 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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