STP6NK60ZFP
  • Share:

STMicroelectronics STP6NK60ZFP

Manufacturer No:
STP6NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 6A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP6NK60ZFP is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. It is designed for demanding switching applications and features integrated Zener diodes for gate-source protection, eliminating the need for external components.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25 °C6A
Drain Current (ID) at TC = 100 °C3.8A
Pulse Drain Current (IDM)24A
Total Dissipation at TC = 25 °C30W
On-Resistance (RDS(on))< 1.2Ω
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Operating Junction Temperature (Tj)-55 to 150°C
Storage Temperature (Tstg)-55 to 150°C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Integrated Zener diodes for gate-source protection, reducing the need for external components.
  • Available in TO-220FP package, suitable for various mounting and soldering processes.

Applications

The STP6NK60ZFP is ideal for a variety of switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive electronics.

Q & A

  1. What is the maximum drain-source voltage of the STP6NK60ZFP?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current (ID) at 25 °C is 6 A.
  3. What is the total dissipation at 25 °C for the TO-220FP package?
    The total dissipation at 25 °C for the TO-220FP package is 30 W.
  4. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 4.2 °C/W.
  5. Does the STP6NK60ZFP have built-in protection diodes?
    Yes, it has integrated Zener diodes for gate-source protection.
  6. What are the typical applications of the STP6NK60ZFP?
    It is used in power supplies, DC-DC converters, motor control, high-frequency switching circuits, and various industrial and automotive electronics.
  7. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150 °C.
  8. What is the storage temperature range?
    The storage temperature range (Tstg) is -55 to 150 °C.
  9. What package types are available for the STP6NK60ZFP?
    The STP6NK60ZFP is available in the TO-220FP package.
  10. Is the STP6NK60ZFP 100% avalanche tested?
    Yes, it is 100% avalanche tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$2.74
46

Please send RFQ , we will respond immediately.

Same Series
STP6NK60ZFP
STP6NK60ZFP
MOSFET N-CH 600V 6A TO220FP
STB6NK60ZT4
STB6NK60ZT4
MOSFET N-CH 600V 6A D2PAK
STB6NK60Z-1
STB6NK60Z-1
MOSFET N-CH 600V 6A I2PAK

Similar Products

Part Number STP6NK60ZFP STP6NK90ZFP STP9NK60ZFP STP4NK60ZFP STP5NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 900 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5.8A (Tc) 7A (Tc) 4A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 2Ohm @ 2.9A, 10V 950mOhm @ 3.5A, 10V 2Ohm @ 2A, 10V 1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 60.5 nC @ 10 V 53 nC @ 10 V 26 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 1350 pF @ 25 V 1110 pF @ 25 V 510 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK

Related Product By Brand

STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP