Overview
The STB6NK60ZT4 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's advanced strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB6NK60ZT4 is designed for demanding applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Drain Current (ID) - Continuous at TC = 25 °C | 6 | A |
| Drain Current (ID) - Continuous at TC = 100 °C | 3.8 | A |
| Pulse Drain Current (IDM) | 24 | A |
| Total Dissipation at TC = 25 °C | 110 | W |
| On-Resistance (RDS(on)) | < 1.2 | Ω |
| Gate Charge (Qg) | 46 | nC |
| Turn-On Delay Time (td(on)) | 14 | ns |
| Turn-Off Delay Time (td(off)) | 47 | ns |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure reliability under harsh conditions.
- Minimized gate charge for efficient switching.
- Integrated gate-source Zener diodes for enhanced ESD protection and to absorb voltage transients.
- Available in various packages including TO-220, D²PAK, I²PAK, and TO-220FP.
- ECOPACK® packages with lead-free second level interconnect for environmental compliance.
Applications
- Switching applications in power supplies, motor control, and power conversion systems.
- High-frequency switching circuits where low on-resistance and high dv/dt capability are crucial.
- Aerospace and automotive systems requiring high reliability and robustness.
- Industrial control and automation systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB6NK60ZT4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 6 A.
- What is the typical on-resistance (RDS(on)) of the STB6NK60ZT4?
The typical on-resistance (RDS(on)) is less than 1.2 Ω.
- What are the integrated Zener diodes used for in the STB6NK60ZT4?
The integrated Zener diodes enhance ESD protection and absorb voltage transients from gate to source.
- In which packages is the STB6NK60ZT4 available?
The STB6NK60ZT4 is available in TO-220, D²PAK, I²PAK, and TO-220FP packages.
- What is the maximum operating junction temperature (Tj) of the STB6NK60ZT4?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the total dissipation at 25 °C for the TO-220 package?
The total dissipation at 25 °C for the TO-220 package is 110 W.
- What is the gate charge (Qg) of the STB6NK60ZT4?
The gate charge (Qg) is 46 nC.
- What are some typical applications of the STB6NK60ZT4?
Typical applications include switching power supplies, motor control, and high-frequency switching circuits.
- Does the STB6NK60ZT4 meet environmental standards?
Yes, it is available in ECOPACK® packages with lead-free second level interconnect, meeting environmental compliance standards.
