STB6NK90ZT4
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STMicroelectronics STB6NK90ZT4

Manufacturer No:
STB6NK90ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 5.8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB6NK90ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer superior performance in high-power applications, featuring a significant reduction in on-resistance and enhanced dv/dt capability. The STB6NK90ZT4 is available in various packages, including D2PAK, TO-220, TO-220FP, and TO-247, making it versatile for different design requirements.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)900V
Gate-source voltage (VGS)±30V
Continuous drain current (ID) at TC = 25 °C5.8A
Continuous drain current (ID) at TC = 100 °C3.65A
Pulsed drain current (IDM)23.2A
Total dissipation at TC = 25 °C (PTOT)140W
Peak diode recovery voltage slope (dv/dt)4.5V/ns
Insulation withstand voltage (VISO)2500V
Operating junction temperature range (Tj)-55 to 150°C
Static drain-source on resistance (RDS(on)) at VGS = 10 V, ID = 2.9 A1.56Ω
Gate threshold voltage (VGS(th))3 to 4.5V

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under high-stress conditions.
  • Minimized gate charge for efficient switching performance.
  • Zener-protected gate-source diode for enhanced ESD protection.
  • Available in D2PAK, TO-220, TO-220FP, and TO-247 packages for flexibility in design.
  • ECOPACK® compliant packages to meet environmental requirements.

Applications

The STB6NK90ZT4 is designed for various high-power switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage DC-DC converters.
  • Other high-power electronic systems requiring reliable and efficient switching.

Q & A

  1. What is the maximum drain-source voltage of the STB6NK90ZT4?
    The maximum drain-source voltage (VDS) is 900 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current (ID) at 25 °C is 5.8 A.
  3. What is the typical on-resistance of the STB6NK90ZT4?
    The typical static drain-source on resistance (RDS(on)) is 1.56 Ω at VGS = 10 V and ID = 2.9 A.
  4. What is the operating junction temperature range?
    The operating junction temperature range is -55 to 150 °C.
  5. Does the STB6NK90ZT4 have built-in ESD protection?
    Yes, it features built-in Zener-protected gate-source diodes for enhanced ESD protection.
  6. In what packages is the STB6NK90ZT4 available?
    The STB6NK90ZT4 is available in D2PAK, TO-220, TO-220FP, and TO-247 packages.
  7. What is the peak diode recovery voltage slope (dv/dt) of the STB6NK90ZT4?
    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.
  8. Is the STB6NK90ZT4 environmentally compliant?
    Yes, it is available in ECOPACK® compliant packages to meet environmental requirements.
  9. What are some typical applications of the STB6NK90ZT4?
    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.
  10. What is the total dissipation at 25 °C for the STB6NK90ZT4?
    The total dissipation at 25 °C (PTOT) is 140 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB6NK90ZT4 STB6NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 905 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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