STP6NK90Z
  • Share:

STMicroelectronics STP6NK90Z

Manufacturer No:
STP6NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 5.8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP6NK90Z is a high-performance N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by STMicroelectronics. It is part of the SuperMESH™ series, which is optimized from ST’s well-established strip-based PowerMESH™ layout. This optimization significantly reduces on-resistance and enhances dv/dt capability, making it suitable for the most demanding applications. The STP6NK90Z complements ST’s full range of high voltage MOSFETs, offering a robust solution for various power management needs.

Key Specifications

Parameter Value Unit
Drain-source voltage (VGS = 0) 900 V
Gate-source voltage ± 30 V
Drain current (continuous) at TC = 25°C 5.8 A
Drain current (continuous) at TC = 100°C 3.65 A
Drain current (pulsed) 23.2 A
Total dissipation at TC = 25°C 140 W
Derating factor 1.12 W/°C
Peak diode recovery voltage slope (dv/dt) 4.5 V/ns
Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V
Maximum operating junction temperature 150 °C
Storage temperature -55 to 150 °C
Thermal resistance junction-case max (TO-220) 0.89 °C/W
Static drain-source on resistance (VGS = 10 V, ID = 2.9 A) 1.56
Gate threshold voltage (VDS = VGS, ID = 100 µA) 3 to 4.5 V

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Gate charge minimized, reducing switching losses.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Very good manufacturing repeatability, ensuring consistent performance across devices.
  • Very low intrinsic capacitances, which helps in reducing switching times and losses.
  • Zener-protected, enhancing the device's reliability and protection against voltage spikes.

Applications

The STP6NK90Z is designed for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STP6NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the continuous drain current at 25°C for the STP6NK90Z?

    The continuous drain current (ID) at 25°C is 5.8 A.

  3. What is the gate-source voltage range for the STP6NK90Z?

    The gate-source voltage (VGS) range is ± 30 V.

  4. What is the thermal resistance junction-case for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.89 °C/W.

  5. Is the STP6NK90Z 100% avalanche tested?

    Yes, the STP6NK90Z is 100% avalanche tested.

  6. What are the key features of the SuperMESH™ series?

    The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

  7. What are the typical applications of the STP6NK90Z?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.

  8. What is the maximum operating junction temperature for the STP6NK90Z?

    The maximum operating junction temperature (Tj) is 150°C.

  9. Is the STP6NK90Z available in different packages?

    Yes, it is available in TO-220, TO-220FP, D2PAK, and TO-247 packages.

  10. What is the static drain-source on resistance of the STP6NK90Z?

    The static drain-source on resistance (RDS(on)) is 1.56 Ω at VGS = 10 V and ID = 2.9 A.

  11. Is the STP6NK90Z RoHS compliant?

    Yes, the STP6NK90Z is RoHS compliant and comes in ECOPACK® packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.43
211

Please send RFQ , we will respond immediately.

Same Series
STP6NK90Z
STP6NK90Z
MOSFET N-CH 900V 5.8A TO220AB
STP6NK90ZFP
STP6NK90ZFP
MOSFET N-CH 900V 5.8A TO220FP
STW7NK90Z
STW7NK90Z
MOSFET N-CH 900V 5.8A TO247-3

Similar Products

Part Number STP6NK90Z STP9NK90Z STP5NK90Z STP6NK50Z STP6NK60Z STP6NK70Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 8A (Tc) 4.5A (Tc) 5.6A (Tc) 6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.3Ohm @ 3.6A, 10V 2.5Ohm @ 2.25A, 10V 1.2Ohm @ 2.8A, 10V 1.2Ohm @ 3A, 10V 1.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 72 nC @ 10 V 41.5 nC @ 10 V 24.6 nC @ 10 V 46 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 2115 pF @ 25 V 1160 pF @ 25 V 690 pF @ 25 V 905 pF @ 25 V 930 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 140W (Tc) 160W (Tc) 125W (Tc) 90W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
TDE1787ADP
TDE1787ADP
STMicroelectronics
IC PWR DRIVER BIPOLAR 1:1 8DIP