STP6NK90Z
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STMicroelectronics STP6NK90Z

Manufacturer No:
STP6NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 5.8A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP6NK90Z is a high-performance N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by STMicroelectronics. It is part of the SuperMESH™ series, which is optimized from ST’s well-established strip-based PowerMESH™ layout. This optimization significantly reduces on-resistance and enhances dv/dt capability, making it suitable for the most demanding applications. The STP6NK90Z complements ST’s full range of high voltage MOSFETs, offering a robust solution for various power management needs.

Key Specifications

Parameter Value Unit
Drain-source voltage (VGS = 0) 900 V
Gate-source voltage ± 30 V
Drain current (continuous) at TC = 25°C 5.8 A
Drain current (continuous) at TC = 100°C 3.65 A
Drain current (pulsed) 23.2 A
Total dissipation at TC = 25°C 140 W
Derating factor 1.12 W/°C
Peak diode recovery voltage slope (dv/dt) 4.5 V/ns
Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V
Maximum operating junction temperature 150 °C
Storage temperature -55 to 150 °C
Thermal resistance junction-case max (TO-220) 0.89 °C/W
Static drain-source on resistance (VGS = 10 V, ID = 2.9 A) 1.56
Gate threshold voltage (VDS = VGS, ID = 100 µA) 3 to 4.5 V

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Gate charge minimized, reducing switching losses.
  • 100% avalanche tested, ensuring robustness against transient conditions.
  • Very good manufacturing repeatability, ensuring consistent performance across devices.
  • Very low intrinsic capacitances, which helps in reducing switching times and losses.
  • Zener-protected, enhancing the device's reliability and protection against voltage spikes.

Applications

The STP6NK90Z is designed for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STP6NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the continuous drain current at 25°C for the STP6NK90Z?

    The continuous drain current (ID) at 25°C is 5.8 A.

  3. What is the gate-source voltage range for the STP6NK90Z?

    The gate-source voltage (VGS) range is ± 30 V.

  4. What is the thermal resistance junction-case for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.89 °C/W.

  5. Is the STP6NK90Z 100% avalanche tested?

    Yes, the STP6NK90Z is 100% avalanche tested.

  6. What are the key features of the SuperMESH™ series?

    The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.

  7. What are the typical applications of the STP6NK90Z?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.

  8. What is the maximum operating junction temperature for the STP6NK90Z?

    The maximum operating junction temperature (Tj) is 150°C.

  9. Is the STP6NK90Z available in different packages?

    Yes, it is available in TO-220, TO-220FP, D2PAK, and TO-247 packages.

  10. What is the static drain-source on resistance of the STP6NK90Z?

    The static drain-source on resistance (RDS(on)) is 1.56 Ω at VGS = 10 V and ID = 2.9 A.

  11. Is the STP6NK90Z RoHS compliant?

    Yes, the STP6NK90Z is RoHS compliant and comes in ECOPACK® packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STW7NK90Z
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Similar Products

Part Number STP6NK90Z STP9NK90Z STP5NK90Z STP6NK50Z STP6NK60Z STP6NK70Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 8A (Tc) 4.5A (Tc) 5.6A (Tc) 6A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.3Ohm @ 3.6A, 10V 2.5Ohm @ 2.25A, 10V 1.2Ohm @ 2.8A, 10V 1.2Ohm @ 3A, 10V 1.8Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 72 nC @ 10 V 41.5 nC @ 10 V 24.6 nC @ 10 V 46 nC @ 10 V 47 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 2115 pF @ 25 V 1160 pF @ 25 V 690 pF @ 25 V 905 pF @ 25 V 930 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 140W (Tc) 160W (Tc) 125W (Tc) 90W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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