Overview
The STP6NK90Z is a high-performance N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by STMicroelectronics. It is part of the SuperMESH™ series, which is optimized from ST’s well-established strip-based PowerMESH™ layout. This optimization significantly reduces on-resistance and enhances dv/dt capability, making it suitable for the most demanding applications. The STP6NK90Z complements ST’s full range of high voltage MOSFETs, offering a robust solution for various power management needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VGS = 0) | 900 | V |
| Gate-source voltage | ± 30 | V |
| Drain current (continuous) at TC = 25°C | 5.8 | A |
| Drain current (continuous) at TC = 100°C | 3.65 | A |
| Drain current (pulsed) | 23.2 | A |
| Total dissipation at TC = 25°C | 140 | W |
| Derating factor | 1.12 | W/°C |
| Peak diode recovery voltage slope (dv/dt) | 4.5 | V/ns |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | 2500 | V |
| Maximum operating junction temperature | 150 | °C |
| Storage temperature | -55 to 150 | °C |
| Thermal resistance junction-case max (TO-220) | 0.89 | °C/W |
| Static drain-source on resistance (VGS = 10 V, ID = 2.9 A) | 1.56 | Ω |
| Gate threshold voltage (VDS = VGS, ID = 100 µA) | 3 to 4.5 | V |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- Gate charge minimized, reducing switching losses.
- 100% avalanche tested, ensuring robustness against transient conditions.
- Very good manufacturing repeatability, ensuring consistent performance across devices.
- Very low intrinsic capacitances, which helps in reducing switching times and losses.
- Zener-protected, enhancing the device's reliability and protection against voltage spikes.
Applications
The STP6NK90Z is designed for various high-power switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage of the STP6NK90Z?
The maximum drain-source voltage (VDS) is 900 V.
- What is the continuous drain current at 25°C for the STP6NK90Z?
The continuous drain current (ID) at 25°C is 5.8 A.
- What is the gate-source voltage range for the STP6NK90Z?
The gate-source voltage (VGS) range is ± 30 V.
- What is the thermal resistance junction-case for the TO-220 package?
The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.89 °C/W.
- Is the STP6NK90Z 100% avalanche tested?
Yes, the STP6NK90Z is 100% avalanche tested.
- What are the key features of the SuperMESH™ series?
The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
- What are the typical applications of the STP6NK90Z?
Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.
- What is the maximum operating junction temperature for the STP6NK90Z?
The maximum operating junction temperature (Tj) is 150°C.
- Is the STP6NK90Z available in different packages?
Yes, it is available in TO-220, TO-220FP, D2PAK, and TO-247 packages.
- What is the static drain-source on resistance of the STP6NK90Z?
The static drain-source on resistance (RDS(on)) is 1.56 Ω at VGS = 10 V and ID = 2.9 A.
- Is the STP6NK90Z RoHS compliant?
Yes, the STP6NK90Z is RoHS compliant and comes in ECOPACK® packages.
