STP9NK90Z
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STMicroelectronics STP9NK90Z

Manufacturer No:
STP9NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 8A TO220AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The STP9NK90Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized from ST's well-established strip-based PowerMESH™ layout, enhancing performance in high-voltage applications. The STP9NK90Z is designed to offer low on-resistance, high dv/dt capability, and minimized gate charge, making it suitable for demanding switching applications.

Key Specifications

Parameter Value Unit
VDSS (Drain-source voltage) 900 V
RDS(on) (Static drain-source on resistance) < 1.3 Ω
ID (Drain current, continuous at TC = 25 °C) 8 A
ID (Drain current, continuous at TC = 100 °C) 5 A
IDM (Drain current, pulsed) 32 A
PTOT (Total dissipation at TC = 25 °C) 160 W
VGS (Gate-source voltage) ± 30 V
VGS(th) (Gate threshold voltage) 3 - 4.5 V
Package TO-220

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Built-in back-to-back Zener diodes for enhanced ESD capability and protection against voltage transients
  • Very good manufacturing repeatability

Applications

  • High current, high speed switching applications
  • Switch mode power supplies
  • DC-AC converters for welding, UPS, and motor drive

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the STP9NK90Z?

    The maximum drain-source voltage (VDSS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STP9NK90Z?

    The typical on-resistance (RDS(on)) is less than 1.3 Ω.

  3. What is the continuous drain current (ID) at 25 °C for the STP9NK90Z?

    The continuous drain current (ID) at 25 °C is 8 A.

  4. What is the total dissipation (PTOT) at 25 °C for the STP9NK90Z?

    The total dissipation (PTOT) at 25 °C is 160 W.

  5. What is the gate-source voltage (VGS) range for the STP9NK90Z?

    The gate-source voltage (VGS) range is ± 30 V.

  6. What are the built-in protection features of the STP9NK90Z?

    The device includes built-in back-to-back Zener diodes to enhance ESD capability and protect against voltage transients.

  7. What are the typical applications of the STP9NK90Z?

    Typical applications include high current, high speed switching, switch mode power supplies, and DC-AC converters for welding, UPS, and motor drive.

  8. What package types are available for the STP9NK90Z?

    The STP9NK90Z is available in the TO-220 package.

  9. What is the significance of the SuperMESH™ series in the context of the STP9NK90Z?

    The SuperMESH™ series is an optimization of ST's strip-based PowerMESH™ layout, offering improved performance in high-voltage applications.

  10. How does the STP9NK90Z handle high dv/dt conditions?

    The STP9NK90Z is designed with extremely high dv/dt capability, making it suitable for demanding applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP9NK90Z STP6NK90Z STP9NK50Z STP9NK60Z STP9NK70Z STP9NK80Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 500 V 600 V 700 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 5.8A (Tc) 7.2A (Tc) 7A (Tc) 7.5A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.6A, 10V 2Ohm @ 2.9A, 10V 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 60.5 nC @ 10 V 32 nC @ 10 V 53 nC @ 10 V 68 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 25 V 1350 pF @ 25 V 910 pF @ 25 V 1110 pF @ 25 V 1370 pF @ 25 V 1900 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 160W (Tc) 140W (Tc) 110W (Tc) 125W (Tc) 115W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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