STP9NK50Z
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STMicroelectronics STP9NK50Z

Manufacturer No:
STP9NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 7.2A TO220AB
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The STP9NK50Z is a high-performance N-channel MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP9NK50Z is designed for high current, high speed switching applications and is particularly suited for off-line power supplies, adaptors, and power factor correction (PFC) circuits.

Key Specifications

ParameterValueUnit
Drain-source Voltage (VDS)500V
Drain-gate Voltage (VDGR)500V
Gate-source Voltage (VGS)±30V
Drain Current (continuous) at TC = 25°C (ID)7.2A
Drain Current (continuous) at TC = 100°C (ID)4.5A
Drain Current (pulsed) (IDM)28.8A
Total Dissipation at TC = 25°C (PTOT)110W
Static Drain-source On Resistance (RDS(on))< 0.85Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Thermal Resistance Junction-case (Rthj-case)1.14°C/W
Thermal Resistance Junction-ambient (Rthj-amb)62.5°C/W
Maximum Lead Temperature For Soldering Purpose (Tl)300°C

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for gate-source protection
  • Low on-resistance (RDS(on)) of less than 0.85 Ω
  • High drain current of up to 7.2 A

Applications

  • High current, high speed switching
  • Off-line power supplies
  • Adaptors
  • Power factor correction (PFC) circuits
  • Lighting applications

Q & A

  1. What is the maximum drain-source voltage of the STP9NK50Z?
    The maximum drain-source voltage is 500 V.
  2. What is the typical on-resistance of the STP9NK50Z?
    The typical on-resistance is less than 0.85 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 7.2 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ±30 V.
  5. Does the STP9NK50Z have built-in protection for the gate-source?
    Yes, it has built-in back-to-back Zener diodes for gate-source protection.
  6. What are the typical applications of the STP9NK50Z?
    Typical applications include high current, high speed switching, off-line power supplies, adaptors, and PFC circuits.
  7. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case for the TO-220 package is 1.14 °C/W.
  8. What is the maximum lead temperature for soldering purpose?
    The maximum lead temperature for soldering purpose is 300 °C.
  9. Is the STP9NK50Z 100% avalanche tested?
    Yes, the STP9NK50Z is 100% avalanche tested.
  10. What is the gate threshold voltage range?
    The gate threshold voltage range is 3 to 4.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP9NK50ZFP
STP9NK50ZFP
MOSFET N-CH 500V 7.2A TO220FP
STP9NK50Z
STP9NK50Z
MOSFET N-CH 500V 7.2A TO220AB

Similar Products

Part Number STP9NK50Z STP9NK60Z STP9NK90Z STP9NK80Z STP9NK70Z STP6NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 900 V 800 V 700 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) 7A (Tc) 8A (Tc) 7.5A (Tc) 7.5A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.75A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 53 nC @ 10 V 72 nC @ 10 V 84 nC @ 10 V 68 nC @ 10 V 24.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1110 pF @ 25 V 2115 pF @ 25 V 1900 pF @ 25 V 1370 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 160W (Tc) 150W (Tc) 115W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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