STP9NK50Z
  • Share:

STMicroelectronics STP9NK50Z

Manufacturer No:
STP9NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 7.2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP9NK50Z is a high-performance N-channel MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP9NK50Z is designed for high current, high speed switching applications and is particularly suited for off-line power supplies, adaptors, and power factor correction (PFC) circuits.

Key Specifications

ParameterValueUnit
Drain-source Voltage (VDS)500V
Drain-gate Voltage (VDGR)500V
Gate-source Voltage (VGS)±30V
Drain Current (continuous) at TC = 25°C (ID)7.2A
Drain Current (continuous) at TC = 100°C (ID)4.5A
Drain Current (pulsed) (IDM)28.8A
Total Dissipation at TC = 25°C (PTOT)110W
Static Drain-source On Resistance (RDS(on))< 0.85Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Thermal Resistance Junction-case (Rthj-case)1.14°C/W
Thermal Resistance Junction-ambient (Rthj-amb)62.5°C/W
Maximum Lead Temperature For Soldering Purpose (Tl)300°C

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for gate-source protection
  • Low on-resistance (RDS(on)) of less than 0.85 Ω
  • High drain current of up to 7.2 A

Applications

  • High current, high speed switching
  • Off-line power supplies
  • Adaptors
  • Power factor correction (PFC) circuits
  • Lighting applications

Q & A

  1. What is the maximum drain-source voltage of the STP9NK50Z?
    The maximum drain-source voltage is 500 V.
  2. What is the typical on-resistance of the STP9NK50Z?
    The typical on-resistance is less than 0.85 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 7.2 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ±30 V.
  5. Does the STP9NK50Z have built-in protection for the gate-source?
    Yes, it has built-in back-to-back Zener diodes for gate-source protection.
  6. What are the typical applications of the STP9NK50Z?
    Typical applications include high current, high speed switching, off-line power supplies, adaptors, and PFC circuits.
  7. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case for the TO-220 package is 1.14 °C/W.
  8. What is the maximum lead temperature for soldering purpose?
    The maximum lead temperature for soldering purpose is 300 °C.
  9. Is the STP9NK50Z 100% avalanche tested?
    Yes, the STP9NK50Z is 100% avalanche tested.
  10. What is the gate threshold voltage range?
    The gate threshold voltage range is 3 to 4.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.88
319

Please send RFQ , we will respond immediately.

Same Series
STP9NK50ZFP
STP9NK50ZFP
MOSFET N-CH 500V 7.2A TO220FP
STP9NK50Z
STP9NK50Z
MOSFET N-CH 500V 7.2A TO220AB

Similar Products

Part Number STP9NK50Z STP9NK60Z STP9NK90Z STP9NK80Z STP9NK70Z STP6NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 900 V 800 V 700 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) 7A (Tc) 8A (Tc) 7.5A (Tc) 7.5A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.75A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 53 nC @ 10 V 72 nC @ 10 V 84 nC @ 10 V 68 nC @ 10 V 24.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1110 pF @ 25 V 2115 pF @ 25 V 1900 pF @ 25 V 1370 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 160W (Tc) 150W (Tc) 115W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA