STP9NK50Z
  • Share:

STMicroelectronics STP9NK50Z

Manufacturer No:
STP9NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 7.2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP9NK50Z is a high-performance N-channel MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP9NK50Z is designed for high current, high speed switching applications and is particularly suited for off-line power supplies, adaptors, and power factor correction (PFC) circuits.

Key Specifications

ParameterValueUnit
Drain-source Voltage (VDS)500V
Drain-gate Voltage (VDGR)500V
Gate-source Voltage (VGS)±30V
Drain Current (continuous) at TC = 25°C (ID)7.2A
Drain Current (continuous) at TC = 100°C (ID)4.5A
Drain Current (pulsed) (IDM)28.8A
Total Dissipation at TC = 25°C (PTOT)110W
Static Drain-source On Resistance (RDS(on))< 0.85Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Thermal Resistance Junction-case (Rthj-case)1.14°C/W
Thermal Resistance Junction-ambient (Rthj-amb)62.5°C/W
Maximum Lead Temperature For Soldering Purpose (Tl)300°C

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in back-to-back Zener diodes for gate-source protection
  • Low on-resistance (RDS(on)) of less than 0.85 Ω
  • High drain current of up to 7.2 A

Applications

  • High current, high speed switching
  • Off-line power supplies
  • Adaptors
  • Power factor correction (PFC) circuits
  • Lighting applications

Q & A

  1. What is the maximum drain-source voltage of the STP9NK50Z?
    The maximum drain-source voltage is 500 V.
  2. What is the typical on-resistance of the STP9NK50Z?
    The typical on-resistance is less than 0.85 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 7.2 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ±30 V.
  5. Does the STP9NK50Z have built-in protection for the gate-source?
    Yes, it has built-in back-to-back Zener diodes for gate-source protection.
  6. What are the typical applications of the STP9NK50Z?
    Typical applications include high current, high speed switching, off-line power supplies, adaptors, and PFC circuits.
  7. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case for the TO-220 package is 1.14 °C/W.
  8. What is the maximum lead temperature for soldering purpose?
    The maximum lead temperature for soldering purpose is 300 °C.
  9. Is the STP9NK50Z 100% avalanche tested?
    Yes, the STP9NK50Z is 100% avalanche tested.
  10. What is the gate threshold voltage range?
    The gate threshold voltage range is 3 to 4.5 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.88
319

Please send RFQ , we will respond immediately.

Same Series
STP9NK50ZFP
STP9NK50ZFP
MOSFET N-CH 500V 7.2A TO220FP
STB9NK50ZT4
STB9NK50ZT4
MOSFET N-CH 500V 7.2A D2PAK

Similar Products

Part Number STP9NK50Z STP9NK60Z STP9NK90Z STP9NK80Z STP9NK70Z STP6NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 900 V 800 V 700 V 500 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) 7A (Tc) 8A (Tc) 7.5A (Tc) 7.5A (Tc) 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.75A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 53 nC @ 10 V 72 nC @ 10 V 84 nC @ 10 V 68 nC @ 10 V 24.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1110 pF @ 25 V 2115 pF @ 25 V 1900 pF @ 25 V 1370 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 160W (Tc) 150W (Tc) 115W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA