STP9NK50ZFP
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STMicroelectronics STP9NK50ZFP

Manufacturer No:
STP9NK50ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 7.2A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP9NK50ZFP is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. It belongs to the SuperMESH™ series, which is known for its extreme optimization of the PowerMESH™ layout. This optimization results in significantly reduced on-resistance and enhanced dv/dt capability, making it suitable for demanding applications. The STP9NK50ZFP is part of a comprehensive range of high-voltage MOSFETs, including the revolutionary MDmesh™ products.

Key Specifications

ParameterValueUnit
Maximum Drain-Source Voltage (Vds)500V
Maximum Drain Current (Id)7.2A
Maximum Drain-Source On-State Resistance (Rds(on))< 0.85Ω
Maximum Gate-Source Voltage (Vgs)30V
Maximum Gate-Threshold Voltage (Vgs(th))4.5V
Maximum Junction Temperature (Tj)150°C
Total Gate Charge (Qg)32nC
Rise Time (tr)20ns
Output Capacitance (Coss)125pF
PackageTO-220FP

Key Features

  • Extremely high dv/dt capability, making it suitable for high-speed switching applications.
  • 100% avalanche tested to ensure robustness under extreme conditions.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances to reduce switching losses.
  • Integrated back-to-back Zener diodes for gate-source protection, eliminating the need for external components.
  • Very good manufacturing repeatability.

Applications

  • High current, high-speed switching applications.
  • Ideal for off-line power supplies, adaptors, and power factor correction (PFC) circuits.
  • Lighting systems.

Q & A

  1. What is the maximum drain-source voltage of the STP9NK50ZFP? The maximum drain-source voltage is 500 V.
  2. What is the maximum drain current of the STP9NK50ZFP? The maximum drain current is 7.2 A.
  3. What is the typical on-state resistance of the STP9NK50ZFP? The typical on-state resistance is less than 0.85 Ω.
  4. What is the maximum gate-source voltage of the STP9NK50ZFP? The maximum gate-source voltage is 30 V.
  5. What is the maximum junction temperature of the STP9NK50ZFP? The maximum junction temperature is 150 °C.
  6. What type of protection does the STP9NK50ZFP have for the gate-source? The STP9NK50ZFP has integrated back-to-back Zener diodes for gate-source protection.
  7. In what package is the STP9NK50ZFP available? The STP9NK50ZFP is available in the TO-220FP package.
  8. What are some typical applications of the STP9NK50ZFP? Typical applications include high current, high-speed switching, off-line power supplies, adaptors, PFC circuits, and lighting systems.
  9. What is the total gate charge of the STP9NK50ZFP? The total gate charge is 32 nC.
  10. What is the rise time of the STP9NK50ZFP? The rise time is 20 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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In Stock

$2.20
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Same Series
STP9NK50ZFP
STP9NK50ZFP
MOSFET N-CH 500V 7.2A TO220FP
STP9NK50Z
STP9NK50Z
MOSFET N-CH 500V 7.2A TO220AB

Similar Products

Part Number STP9NK50ZFP STP9NK60ZFP STP9NK70ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc) 7A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 53 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1110 pF @ 25 V 1370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 30W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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