STP9NK70ZFP
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STMicroelectronics STP9NK70ZFP

Manufacturer No:
STP9NK70ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 700V 7.5A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP9NK70ZFP is a high-performance N-Channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's well-established strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STP9NK70ZFP is designed for high-current, high-speed switching applications and is ideal for use in off-line power supplies, adaptors, and power factor correction (PFC) circuits. It features built-in Zener diodes for gate-source protection, improved ESD capability, and minimized gate charge, making it a reliable choice for demanding power management tasks.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)700V
Drain-Source On Resistance (RDS(on))< 1.2Ω
Continuous Drain Current (ID)7.5A (at TC = 25°C)
Pulsed Drain Current (IDM)30A
Gate-Source Voltage (VGS)±30V
Total Dissipation (PTOT)35W (at TC = 25°C for TO-220FP)
ESD Gate-Source Protection4000V
Peak Diode Recovery Voltage Slope (dv/dt)4.5V/ns

Key Features

  • Extremely high dv/dt capability
  • Improved ESD protection with built-in Zener diodes
  • 100% avalanche rated
  • Minimized gate charge
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Enhanced gate-source Zener diode protection to absorb voltage transients

Applications

  • High current, high speed switching
  • Off-line power supplies
  • Adaptors
  • Power Factor Correction (PFC) circuits

Q & A

  1. What is the maximum drain-source voltage of the STP9NK70ZFP? The maximum drain-source voltage is 700 V.
  2. What is the typical on-resistance of the STP9NK70ZFP? The typical on-resistance is less than 1.2 Ω.
  3. What is the continuous drain current at 25°C for the STP9NK70ZFP? The continuous drain current is 7.5 A at 25°C.
  4. What is the pulsed drain current capability of the STP9NK70ZFP? The pulsed drain current is 30 A.
  5. What is the gate-source voltage range for the STP9NK70ZFP? The gate-source voltage range is ±30 V.
  6. What is the total dissipation at 25°C for the TO-220FP package? The total dissipation is 35 W at 25°C for the TO-220FP package.
  7. Does the STP9NK70ZFP have built-in ESD protection? Yes, it has built-in Zener diodes for gate-source ESD protection.
  8. What is the peak diode recovery voltage slope (dv/dt) of the STP9NK70ZFP? The peak diode recovery voltage slope is 4.5 V/ns.
  9. What are the typical applications of the STP9NK70ZFP? Typical applications include high current, high speed switching, off-line power supplies, adaptors, and PFC circuits.
  10. What packages are available for the STP9NK70ZFP? The STP9NK70ZFP is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STP9NK70Z
STP9NK70Z
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STB9NK70Z-1
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Similar Products

Part Number STP9NK70ZFP STP9NK50ZFP STP9NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 7.2A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 4A, 10V 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 32 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 910 pF @ 25 V 1110 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 35W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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