STW9NK70Z
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STMicroelectronics STW9NK70Z

Manufacturer No:
STW9NK70Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 700V 7.5A TO247-3
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STW9NK70Z is a high-performance N-Channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's well-established strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STW9NK70Z is designed for high current, high speed switching applications and is ideal for use in off-line power supplies, adaptors, and power factor correction (PFC) circuits.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 700 V
Drain-Source On Resistance (RDS(on)) < 1.2
Continuous Drain Current (ID) 7.5 A
Pulsed Drain Current (IDM) 30 A
Gate-Source Voltage (VGS) ±30 V
Total Dissipation at TC = 25°C (PTOT) 156 W
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-case (Rthj-case) 0.8 °C/W
Thermal Resistance Junction-ambient (Rthj-amb) 62.5 °C/W

Key Features

  • Extremely high dv/dt capability
  • Improved ESD capability with built-in back-to-back Zener diodes
  • 100% avalanche rated
  • Minimized gate charge
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Zener-protected SuperMESH™ technology for enhanced performance and protection

Applications

  • High current, high speed switching applications
  • Off-line power supplies
  • Adaptors
  • Power factor correction (PFC) circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW9NK70Z?

    The maximum drain-source voltage (VDS) is 700 V.

  2. What is the typical on-resistance (RDS(on)) of the STW9NK70Z?

    The typical on-resistance (RDS(on)) is less than 1.2 Ω.

  3. What is the continuous drain current (ID) rating of the STW9NK70Z?

    The continuous drain current (ID) rating is 7.5 A.

  4. What is the maximum pulsed drain current (IDM) of the STW9NK70Z?

    The maximum pulsed drain current (IDM) is 30 A.

  5. What is the gate-source voltage (VGS) range of the STW9NK70Z?

    The gate-source voltage (VGS) range is ±30 V.

  6. What are the thermal resistance values for the STW9NK70Z?

    The thermal resistance junction-case (Rthj-case) is 0.8 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.

  7. What are the typical applications of the STW9NK70Z?

    The STW9NK70Z is typically used in high current, high speed switching applications, off-line power supplies, adaptors, and PFC circuits.

  8. Does the STW9NK70Z have built-in ESD protection?
  9. What is the operating junction temperature range of the STW9NK70Z?

    The operating junction temperature range is -55 to 150 °C.

  10. What packages are available for the STW9NK70Z?

    The STW9NK70Z is available in TO-220, TO-220FP, D2PAK, I2PAK, and TO-247 packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STP9NK70ZFP
STP9NK70ZFP
MOSFET N-CH 700V 7.5A TO220FP
STB9NK70ZT4
STB9NK70ZT4
MOSFET N-CH 700V 7.5A D2PAK
STP9NK70Z
STP9NK70Z
MOSFET N-CH 700V 7.5A TO220AB
STB9NK70Z-1
STB9NK70Z-1
MOSFET N-CH 700V 7.5A I2PAK

Similar Products

Part Number STW9NK70Z STW9NK90Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 900 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 4A, 10V 1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2115 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 156W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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