STP9NK60ZFP
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STMicroelectronics STP9NK60ZFP

Manufacturer No:
STP9NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP9NK60ZFP is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This device is designed for high-voltage and high-current applications, offering superior characteristics such as extremely high dv/dt capability, improved ESD protection, and minimized gate charge. Available in the TO-220FP package, it is suitable for a variety of demanding switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C7A
Drain Current (ID) at TC = 100°C4.4A
Pulsed Drain Current (IDM)28A
Total Dissipation at TC = 25°C (PTOT)30W
Static Drain-Source On-Resistance (RDS(on))0.85 (typ), 0.95 (max)Ω
Gate Threshold Voltage (VGS(th))3 to 4.5V
Operating Junction Temperature (TJ)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Improved ESD capability due to built-in back-to-back Zener diodes.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances.
  • Zener-protected to safely absorb voltage transients from gate to source.

Applications

The STP9NK60ZFP is primarily used in switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drive systems.
  • High-voltage and high-current switching circuits.
  • Aerospace and automotive systems requiring high reliability.

Q & A

  1. What is the maximum drain-source voltage of the STP9NK60ZFP?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current (ID) at 25°C is 7 A.
  3. What is the typical on-resistance of the STP9NK60ZFP?
    The typical static drain-source on-resistance (RDS(on)) is 0.85 Ω.
  4. What is the maximum junction temperature?
    The maximum junction temperature (TJ) is 150°C.
  5. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) is 4.2°C/W.
  6. Does the STP9NK60ZFP have built-in ESD protection?
    Yes, it has built-in back-to-back Zener diodes to enhance ESD capability.
  7. What are the key benefits of the SuperMESH™ technology used in this MOSFET?
    The SuperMESH™ technology provides extremely high dv/dt capability, improved ESD protection, and minimized gate charge.
  8. In which packages is the STP9NK60ZFP available?
    The STP9NK60ZFP is available in the TO-220FP package.
  9. What are some common applications for the STP9NK60ZFP?
    Common applications include power supplies, motor control systems, and high-voltage switching circuits.
  10. Is the STP9NK60ZFP 100% avalanche tested?
    Yes, the device is 100% avalanche tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STP9NK60Z
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Similar Products

Part Number STP9NK60ZFP STP9NK70ZFP STP9NK65ZFP STP6NK60ZFP STP9NK50ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V 650 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 7.5A (Tc) 6.4A (Tc) 6A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 3.2A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 68 nC @ 10 V 41 nC @ 10 V 46 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 1370 pF @ 25 V 1145 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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