STP9NK60ZFP
  • Share:

STMicroelectronics STP9NK60ZFP

Manufacturer No:
STP9NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP9NK60ZFP is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This device is designed for high-voltage and high-current applications, offering superior characteristics such as extremely high dv/dt capability, improved ESD protection, and minimized gate charge. Available in the TO-220FP package, it is suitable for a variety of demanding switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C7A
Drain Current (ID) at TC = 100°C4.4A
Pulsed Drain Current (IDM)28A
Total Dissipation at TC = 25°C (PTOT)30W
Static Drain-Source On-Resistance (RDS(on))0.85 (typ), 0.95 (max)Ω
Gate Threshold Voltage (VGS(th))3 to 4.5V
Operating Junction Temperature (TJ)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Improved ESD capability due to built-in back-to-back Zener diodes.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances.
  • Zener-protected to safely absorb voltage transients from gate to source.

Applications

The STP9NK60ZFP is primarily used in switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drive systems.
  • High-voltage and high-current switching circuits.
  • Aerospace and automotive systems requiring high reliability.

Q & A

  1. What is the maximum drain-source voltage of the STP9NK60ZFP?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current (ID) at 25°C is 7 A.
  3. What is the typical on-resistance of the STP9NK60ZFP?
    The typical static drain-source on-resistance (RDS(on)) is 0.85 Ω.
  4. What is the maximum junction temperature?
    The maximum junction temperature (TJ) is 150°C.
  5. What is the thermal resistance junction-case for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) is 4.2°C/W.
  6. Does the STP9NK60ZFP have built-in ESD protection?
    Yes, it has built-in back-to-back Zener diodes to enhance ESD capability.
  7. What are the key benefits of the SuperMESH™ technology used in this MOSFET?
    The SuperMESH™ technology provides extremely high dv/dt capability, improved ESD protection, and minimized gate charge.
  8. In which packages is the STP9NK60ZFP available?
    The STP9NK60ZFP is available in the TO-220FP package.
  9. What are some common applications for the STP9NK60ZFP?
    Common applications include power supplies, motor control systems, and high-voltage switching circuits.
  10. Is the STP9NK60ZFP 100% avalanche tested?
    Yes, the device is 100% avalanche tested for reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$1.70
305

Please send RFQ , we will respond immediately.

Same Series
STP9NK60Z
STP9NK60Z
MOSFET N-CH 600V 7A TO220AB
STP9NK60ZFP
STP9NK60ZFP
MOSFET N-CH 600V 7A TO220FP

Similar Products

Part Number STP9NK60ZFP STP9NK70ZFP STP9NK65ZFP STP6NK60ZFP STP9NK50ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V 650 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 7.5A (Tc) 6.4A (Tc) 6A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 3.2A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 68 nC @ 10 V 41 nC @ 10 V 46 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 1370 pF @ 25 V 1145 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 30W (Tc) 35W (Tc) 30W (Tc) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32L071RZT6
STM32L071RZT6
STMicroelectronics
IC MCU 32BIT 192KB FLASH 64LQFP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F101ZDT6
STM32F101ZDT6
STMicroelectronics
IC MCU 32BIT 384KB FLASH 144LQFP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC