STP9NK60Z
  • Share:

STMicroelectronics STP9NK60Z

Manufacturer No:
STP9NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP9NK60Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of demanding applications. Available in TO-220 and TO-220FP packages, the STP9NK60Z features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 0.85 Ω, and a continuous drain current (ID) of 7 A at 25°C. The integrated Zener diodes enhance the device’s ESD capability and protect against voltage transients, eliminating the need for external components.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C7A
Pulsed Drain Current (IDM)28A
Total Dissipation at TC = 25°C30W
Static Drain-Source On-Resistance (RDS(on))0.85 - 0.95Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W

Key Features

  • Extremely high dv/dt capability
  • Improved ESD capability due to integrated back-to-back Zener diodes
  • 100% avalanche tested
  • Minimized gate charge
  • Very low intrinsic capacitances
  • High level of dv/dt capability for demanding applications

Applications

The STP9NK60Z is primarily used in switching applications where high reliability, efficiency, and robustness are required. These include but are not limited to power supplies, motor control, and other high-power electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STP9NK60Z?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance (RDS(on)) of the STP9NK60Z?
    The typical on-resistance (RDS(on)) is 0.85 Ω.
  3. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is 7 A.
  4. What is the pulsed drain current (IDM) of the STP9NK60Z?
    The pulsed drain current (IDM) is 28 A.
  5. What is the total dissipation at 25°C for the TO-220 package?
    The total dissipation at 25°C for the TO-220 package is 30 W.
  6. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is 3 to 4.5 V.
  7. What are the thermal resistance values for the STP9NK60Z?
    The thermal resistance junction-case (Rthj-case) is 4.2 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
  8. What are the key features of the STP9NK60Z?
    The key features include high dv/dt capability, improved ESD capability, 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances.
  9. In what types of applications is the STP9NK60Z typically used?
    The STP9NK60Z is typically used in switching applications such as power supplies and motor control.
  10. What packages are available for the STP9NK60Z?
    The STP9NK60Z is available in TO-220 and TO-220FP packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.97
115

Please send RFQ , we will respond immediately.

Same Series
STP9NK60Z
STP9NK60Z
MOSFET N-CH 600V 7A TO220AB
STP9NK60ZFP
STP9NK60ZFP
MOSFET N-CH 600V 7A TO220FP

Similar Products

Part Number STP9NK60Z STP9NK90Z STP9NK65Z STP9NK80Z STP9NK60ZD STP9NK70Z STP6NK60Z STP9NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 900 V 650 V 800 V 600 V 700 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc) 6.4A (Tc) 7.5A (Tc) 7A (Tc) 7.5A (Tc) 6A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.2A, 10V 1.2Ohm @ 3.75A, 10V 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 72 nC @ 10 V 41 nC @ 10 V 84 nC @ 10 V 53 nC @ 10 V 68 nC @ 10 V 46 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 2115 pF @ 25 V 1145 pF @ 25 V 1900 pF @ 25 V 1110 pF @ 25 V 1370 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 160W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 115W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
Z0409MF 1AA2
Z0409MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
L6375D013TR
L6375D013TR
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 20SOIC
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO