Overview
The STP9NK60Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of demanding applications. Available in TO-220 and TO-220FP packages, the STP9NK60Z features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 0.85 Ω, and a continuous drain current (ID) of 7 A at 25°C. The integrated Zener diodes enhance the device’s ESD capability and protect against voltage transients, eliminating the need for external components.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 7 | A |
| Pulsed Drain Current (IDM) | 28 | A |
| Total Dissipation at TC = 25°C | 30 | W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.85 - 0.95 | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 4.2 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Extremely high dv/dt capability
- Improved ESD capability due to integrated back-to-back Zener diodes
- 100% avalanche tested
- Minimized gate charge
- Very low intrinsic capacitances
- High level of dv/dt capability for demanding applications
Applications
The STP9NK60Z is primarily used in switching applications where high reliability, efficiency, and robustness are required. These include but are not limited to power supplies, motor control, and other high-power electronic systems.
Q & A
- What is the maximum drain-source voltage of the STP9NK60Z?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance (RDS(on)) of the STP9NK60Z?
The typical on-resistance (RDS(on)) is 0.85 Ω. - What is the continuous drain current (ID) at 25°C?
The continuous drain current (ID) at 25°C is 7 A. - What is the pulsed drain current (IDM) of the STP9NK60Z?
The pulsed drain current (IDM) is 28 A. - What is the total dissipation at 25°C for the TO-220 package?
The total dissipation at 25°C for the TO-220 package is 30 W. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 3 to 4.5 V. - What are the thermal resistance values for the STP9NK60Z?
The thermal resistance junction-case (Rthj-case) is 4.2 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W. - What are the key features of the STP9NK60Z?
The key features include high dv/dt capability, improved ESD capability, 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances. - In what types of applications is the STP9NK60Z typically used?
The STP9NK60Z is typically used in switching applications such as power supplies and motor control. - What packages are available for the STP9NK60Z?
The STP9NK60Z is available in TO-220 and TO-220FP packages.
