STP9NK60Z
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STMicroelectronics STP9NK60Z

Manufacturer No:
STP9NK60Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP9NK60Z is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of demanding applications. Available in TO-220 and TO-220FP packages, the STP9NK60Z features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 0.85 Ω, and a continuous drain current (ID) of 7 A at 25°C. The integrated Zener diodes enhance the device’s ESD capability and protect against voltage transients, eliminating the need for external components.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C7A
Pulsed Drain Current (IDM)28A
Total Dissipation at TC = 25°C30W
Static Drain-Source On-Resistance (RDS(on))0.85 - 0.95Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Thermal Resistance Junction-Case (Rthj-case)4.2°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W

Key Features

  • Extremely high dv/dt capability
  • Improved ESD capability due to integrated back-to-back Zener diodes
  • 100% avalanche tested
  • Minimized gate charge
  • Very low intrinsic capacitances
  • High level of dv/dt capability for demanding applications

Applications

The STP9NK60Z is primarily used in switching applications where high reliability, efficiency, and robustness are required. These include but are not limited to power supplies, motor control, and other high-power electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the STP9NK60Z?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance (RDS(on)) of the STP9NK60Z?
    The typical on-resistance (RDS(on)) is 0.85 Ω.
  3. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is 7 A.
  4. What is the pulsed drain current (IDM) of the STP9NK60Z?
    The pulsed drain current (IDM) is 28 A.
  5. What is the total dissipation at 25°C for the TO-220 package?
    The total dissipation at 25°C for the TO-220 package is 30 W.
  6. What is the gate threshold voltage (VGS(th)) range?
    The gate threshold voltage (VGS(th)) range is 3 to 4.5 V.
  7. What are the thermal resistance values for the STP9NK60Z?
    The thermal resistance junction-case (Rthj-case) is 4.2 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
  8. What are the key features of the STP9NK60Z?
    The key features include high dv/dt capability, improved ESD capability, 100% avalanche testing, minimized gate charge, and very low intrinsic capacitances.
  9. In what types of applications is the STP9NK60Z typically used?
    The STP9NK60Z is typically used in switching applications such as power supplies and motor control.
  10. What packages are available for the STP9NK60Z?
    The STP9NK60Z is available in TO-220 and TO-220FP packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP9NK60Z
STP9NK60Z
MOSFET N-CH 600V 7A TO220AB
STP9NK60ZFP
STP9NK60ZFP
MOSFET N-CH 600V 7A TO220FP

Similar Products

Part Number STP9NK60Z STP9NK90Z STP9NK65Z STP9NK80Z STP9NK60ZD STP9NK70Z STP6NK60Z STP9NK50Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 900 V 650 V 800 V 600 V 700 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc) 6.4A (Tc) 7.5A (Tc) 7A (Tc) 7.5A (Tc) 6A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.2A, 10V 1.2Ohm @ 3.75A, 10V 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 72 nC @ 10 V 41 nC @ 10 V 84 nC @ 10 V 53 nC @ 10 V 68 nC @ 10 V 46 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 2115 pF @ 25 V 1145 pF @ 25 V 1900 pF @ 25 V 1110 pF @ 25 V 1370 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 160W (Tc) 125W (Tc) 150W (Tc) 125W (Tc) 115W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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