STP9NK60ZD
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STMicroelectronics STP9NK60ZD

Manufacturer No:
STP9NK60ZD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 7A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP9NK60ZD is an N-channel Zener-protected Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various switching applications. It features a low on-resistance, high dv/dt capability, and integrated Zener diodes for enhanced ESD protection and voltage transient absorption. The STP9NK60ZD is available in several packages, including D²PAK, TO-220, and TO-220FP, making it versatile for different design requirements.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C7A
Continuous Drain Current (ID) at TC = 100°C4.3A
Pulsed Drain Current (IDM)28A
Total Dissipation (PTOT) at TC = 25°C125W
Static Drain-Source On-Resistance (RDS(on))0.85 - 0.95Ω
Gate Threshold Voltage (VGS(th))2.5 - 4.5V
Operating Junction Temperature (TJ)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)1°C/W

Key Features

  • Extremely high dv/dt capability
  • Zener-protected for enhanced ESD protection and voltage transient absorption
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Fast internal recovery diode
  • Integrated back-to-back Zener diodes for gate-source protection

Applications

The STP9NK60ZD is primarily used in switching applications where high reliability, low on-resistance, and high dv/dt capability are essential. These applications include but are not limited to:

  • Power supplies
  • Motor control
  • High-frequency switching circuits
  • Industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the STP9NK60ZD?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STP9NK60ZD?
    The typical static drain-source on-resistance (RDS(on)) is 0.85 Ω.
  3. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current (ID) at 25°C is 7 A.
  4. What is the operating junction temperature range of the STP9NK60ZD?
    The operating junction temperature range is -55°C to 150°C.
  5. What is the purpose of the integrated Zener diodes in the STP9NK60ZD?
    The integrated Zener diodes enhance ESD protection and absorb voltage transients from gate to source.
  6. What are the available packages for the STP9NK60ZD?
    The device is available in D²PAK, TO-220, and TO-220FP packages.
  7. What is the typical turn-on delay time of the STP9NK60ZD?
    The typical turn-on delay time (td(on)) is around 11.4 ns.
  8. What is the maximum pulse drain current of the STP9NK60ZD?
    The maximum pulse drain current (IDM) is 28 A.
  9. What is the thermal resistance junction-case of the STP9NK60ZD in D²PAK package?
    The thermal resistance junction-case (Rthj-case) is 1 °C/W.
  10. What are some common applications of the STP9NK60ZD?
    Common applications include power supplies, motor control, high-frequency switching circuits, and industrial control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STF9NK60ZD
STF9NK60ZD
MOSFET N-CH 600V 7A TO220FP

Similar Products

Part Number STP9NK60ZD STP9NK60Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 1110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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