Overview
The VNS3NV04D-E is an OMNIFET II fully autoprotected Power MOSFET produced by STMicroelectronics. This device is designed using STMicroelectronics' VIPower M0-3 technology and is housed in a standard SO-8 package. It is intended for replacement of standard Power MOSFETs in applications up to 50 kHz DC. The VNS3NV04D-E is AEC-Q100 qualified, making it suitable for automotive applications, and is also ECOPACK compliant, meaning it is lead-free and RoHS compliant.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCLAMP (Drain-source clamp voltage) | VIN = 0 V; ID = 1.5 A | 40 | 45 | 55 | V |
| VCLTH (Drain-source clamp threshold voltage) | VIN = 0 V; ID = 2 mA | 36 | V | ||
| VINTH (Input threshold voltage) | VDS = VIN; ID = 1 mA | 0.5 | 2.5 | V | |
| IISS (Supply current from input pin) | VDS = 0 V; VIN = 5 V | 100 | 150 | µA | |
| RDS(on) (Static drain-source on resistance) | VIN = 5 V; ID = 1.5 A; Tj = 25 °C | 120 | mΩ | ||
| Tj (Operating junction temperature) | -40 | 150 | °C | ||
| Tc (Case operating temperature) | -40 | 150 | °C | ||
| Tstg (Storage temperature) | -55 | 150 | °C | ||
| Pd (Power dissipation at Tc = 25 °C) | 4 | W |
Key Features
- AEC-Q100 qualified for automotive applications
- ECOPACK: lead-free and RoHS compliant
- Linear current limitation
- Thermal shutdown
- Short-circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
Applications
The VNS3NV04D-E is designed for use in various automotive and industrial applications, including motor control, power switching, and protection circuits. Its features make it particularly suitable for environments requiring high reliability and robust protection mechanisms.
- Automotive systems (e.g., motor control, power management)
- Industrial power switching and control
- Protection circuits in harsh environments
Q & A
- What is the VNS3NV04D-E?
The VNS3NV04D-E is an OMNIFET II fully autoprotected Power MOSFET produced by STMicroelectronics.
- What package does the VNS3NV04D-E come in?
The VNS3NV04D-E is housed in a standard SO-8 package.
- What are the key features of the VNS3NV04D-E?
Key features include linear current limitation, thermal shutdown, short-circuit protection, integrated clamp, low current drawn from the input pin, diagnostic feedback, ESD protection, and direct access to the gate of the Power MOSFET.
- Is the VNS3NV04D-E AEC-Q100 qualified?
- What is the maximum operating junction temperature of the VNS3NV04D-E?
The maximum operating junction temperature is 150 °C.
- What is the power dissipation at Tc = 25 °C for the VNS3NV04D-E?
The power dissipation at Tc = 25 °C is 4 W.
- Does the VNS3NV04D-E have built-in protection mechanisms?
- How does the VNS3NV04D-E provide diagnostic feedback?
Diagnostic feedback is provided through the input pin.
- Is the VNS3NV04D-E RoHS compliant?
- What are the typical applications of the VNS3NV04D-E?
Typical applications include automotive systems, industrial power switching, and protection circuits in harsh environments.
