Overview
The VNS3NV04DP-E is an OMNIFET II fully autoprotected Power MOSFET produced by STMicroelectronics. This device is designed to replace standard Power MOSFETs in various applications, particularly those requiring high reliability and protection features. It is part of the VNS3NV04DP series and is housed in a standard SO-8 package. The OMNIFET II technology ensures robust performance and integrated protection mechanisms, making it suitable for harsh environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Configuration | Low Side | |
| No of Outputs | Dual | |
| On-state Resistance (Max) | 120 mΩ | |
| Output Current | 5 A | |
| Package Style | SOIC-8 | |
| Mounting Method | Surface Mount | |
| Drain-Source Clamp Voltage | 40 V | |
| Current Limitation (Typ) | 3.5 A | |
| Operating Junction Temperature | -40°C to 150°C | |
| Storage Temperature | -55°C to 150°C | |
| ESD Protection | 4000 V (Human Body Model) |
Key Features
- AEC-Q100 qualified for automotive applications
- ECOPACK: lead-free and RoHS compliant
- Linear current limitation and thermal shutdown for protection
- Integrated clamp and short-circuit protection
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection according to the Human Body model
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs in up to 50 kHz DC applications
Applications
The VNS3NV04DP-E is suitable for a variety of applications, including:
- Automotive systems requiring high reliability and protection
- Industrial control and automation
- Power management in electronic devices
- DC-DC converters and power supplies
- Motor control and drive systems
Q & A
- What is the VNS3NV04DP-E?
The VNS3NV04DP-E is an OMNIFET II fully autoprotected Power MOSFET produced by STMicroelectronics.
- What package type does the VNS3NV04DP-E use?
The VNS3NV04DP-E is housed in a standard SO-8 package.
- What is the maximum on-state resistance of the VNS3NV04DP-E?
The maximum on-state resistance is 120 mΩ.
- What are the key protection features of the VNS3NV04DP-E?
The device features linear current limitation, thermal shutdown, short-circuit protection, and integrated clamp.
- Is the VNS3NV04DP-E ESD protected?
- What is the operating junction temperature range of the VNS3NV04DP-E?
The operating junction temperature range is -40°C to 150°C.
- Is the VNS3NV04DP-E AEC-Q100 qualified?
- What is the typical current limitation of the VNS3NV04DP-E?
The typical current limitation is 3.5 A.
- Can the VNS3NV04DP-E be driven from a TTL Logic circuit?
- What are some common applications of the VNS3NV04DP-E?
