Overview
The VNS1NV04DP-E is a fully autoprotected Power MOSFET device from STMicroelectronics, consisting of two monolithic OMNIFET II chips housed in a standard SO-8 package. These chips are designed using STMicroelectronics' VIPower™ M0-3 technology and are intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. The device features built-in thermal shutdown, linear current limitation, and overvoltage clamp, providing robust protection in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin, enhancing diagnostic capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | Internally clamped | V |
| Drain Current (ID) | Internally limited | A |
| Operating Junction Temperature (Tj) | -40 to 150 | °C |
| Case Operating Temperature (Tc) | -40 to 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Drain-Source Clamp Voltage (VCLAMP) | 40 to 55 | V |
| Static Drain-Source On Resistance (RDS(on)) | 250 to 500 | mΩ |
| Input Current (IIN) | +/-20 | mA |
| Electrostatic Discharge (VESD) | 4000 to 16500 | V |
Key Features
- In compliance with the 2002/95/EC European directive
- Compatible with standard power MOSFETs
- ESD protection
- Diagnostic feedback through input pin
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Direct access to the gate of the power MOSFET (analog driving)
- Integrated clamp
Applications
The VNS1NV04DP-E is suitable for a variety of applications, including automotive systems, industrial control, and power management systems. Its robust protection features and compatibility with standard power MOSFETs make it an ideal choice for replacing traditional MOSFETs in applications requiring high reliability and protection against overvoltage, short circuits, and thermal issues.
Q & A
- What is the VNS1NV04DP-E?
The VNS1NV04DP-E is a fully autoprotected Power MOSFET device from STMicroelectronics, consisting of two monolithic OMNIFET II chips in a SO-8 package.
- What technology is used in the VNS1NV04DP-E?
The VNS1NV04DP-E is designed using STMicroelectronics' VIPower™ M0-3 technology.
- What are the key protection features of the VNS1NV04DP-E?
The device features thermal shutdown, linear current limitation, overvoltage clamp, and short circuit protection.
- How can fault feedback be detected in the VNS1NV04DP-E?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What is the maximum drain-source voltage for the VNS1NV04DP-E?
The maximum drain-source voltage is internally clamped, with a clamp voltage range of 40 to 55 V.
- What is the operating temperature range for the VNS1NV04DP-E?
The operating junction temperature range is -40 to 150 °C, and the case operating temperature range is also -40 to 150 °C.
- Is the VNS1NV04DP-E compliant with any specific European directives?
Yes, it is in compliance with the 2002/95/EC European directive.
- What type of package does the VNS1NV04DP-E come in?
The device is housed in a standard SO-8 package.
- What are some typical applications for the VNS1NV04DP-E?
It is suitable for automotive systems, industrial control, and power management systems.
- Does the VNS1NV04DP-E have ESD protection?
Yes, the device includes ESD protection.
