Overview
The VNS1NV04D-E is a high-performance, fully autoprotected Power MOSFET device from STMicroelectronics. It is designed using the VIPower M0-3 technology and is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. The device consists of two monolithic OMNIFET II chips housed in a standard SO-8 package. This configuration provides advanced protection features and diagnostic capabilities, making it suitable for a variety of power management and control applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | Internally clamped | V |
| Drain Current (ID) | Internally limited | A |
| Drain-Source Clamp Voltage (VCLAMP) | 40 - 45 - 55 | V |
| On-State Resistance (RDS(ON)) | 250 - 500 | mΩ |
| Input Current (IIN) | +/-20 | mA |
| Operating Junction Temperature (Tj) | Internally limited | °C |
| Case Operating Temperature (Tc) | Internally limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated overvoltage clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power MOSFET (analog driving)
- Compatible with standard power MOSFETs
- In compliance with the 2002/95/EC European directive
Applications
The VNS1NV04D-E is suitable for various power management and control applications, including but not limited to:
- Automotive systems
- Industrial control systems
- Power supplies and DC-DC converters
- Motor control and drive systems
- Protection and switching circuits in harsh environments
Q & A
- What is the VNS1NV04D-E? The VNS1NV04D-E is a fully autoprotected Power MOSFET device from STMicroelectronics, designed using the VIPower M0-3 technology.
- What is the package type of the VNS1NV04D-E? The device is housed in a standard SO-8 package.
- What are the key protection features of the VNS1NV04D-E? The device includes linear current limitation, thermal shutdown, short circuit protection, and an integrated overvoltage clamp.
- How does the VNS1NV04D-E provide diagnostic feedback? Diagnostic feedback is provided through the input pin, allowing for monitoring of fault conditions.
- What is the maximum drain-source voltage (VDS) for the VNS1NV04D-E? The drain-source voltage is internally clamped.
- What is the typical on-state resistance (RDS(ON)) of the VNS1NV04D-E? The typical on-state resistance is 250 mΩ.
- What are the operating temperature ranges for the VNS1NV04D-E? The operating junction temperature (Tj) and case operating temperature (Tc) are internally limited, while the storage temperature (Tstg) ranges from -55°C to 150°C.
- Is the VNS1NV04D-E compliant with any specific European directives? Yes, it is in compliance with the 2002/95/EC European directive.
- What types of applications is the VNS1NV04D-E suitable for? It is suitable for automotive systems, industrial control systems, power supplies, DC-DC converters, motor control, and protection and switching circuits in harsh environments.
- Does the VNS1NV04D-E have ESD protection? Yes, the device includes ESD protection.
