Overview
The NIF5002NT1 is a self-protected MOSFET from ON Semiconductor, part of their advanced series of power MOSFETs. This device utilizes ON Semiconductor's latest MOSFET technology to achieve low on-resistance per silicon area while incorporating smart protection features. It is a single N-Channel MOSFET with integrated thermal and current limits, providing robust protection against short circuits, overvoltage, and high energy in avalanche mode. The device also features ESD protection and a Drain-to-Gate clamp for additional safety margins.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage Internally Clamped | VDSS | 42 | V |
| Gate-to-Source Voltage | VGS | ±14 | V |
| Continuous Drain Current | ID | Internally Limited | A |
| Power Dissipation at TA = 25°C | PD | 1.1 | W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 150 | mJ |
| On-Resistance at VGS = 10 V | RDS(on) | 165 mΩ | mΩ |
| Package Type | SOT-223-4 / TO-261-4D |
Key Features
- Current Limitation
- Thermal Shutdown with Automatic Restart
- Short Circuit Protection
- IDSS Specified at Elevated Temperature
- Avalanche Energy Specified
- Slew Rate Control for Low Noise Switching
- Overvoltage Clamped Protection
- ESD Protection provided by an integrated Gate-to-Source clamp
- Pb-Free Packages are Available
Applications
- Lighting
- Solenoids
- Small Motors
Q & A
- What is the maximum drain-to-source voltage of the NIF5002NT1?
The maximum drain-to-source voltage (VDSS) is 42 V.
- What type of protection does the NIF5002NT1 offer?
The device offers integrated thermal and current limits, short circuit protection, overvoltage clamped protection, and ESD protection.
- What is the typical on-resistance of the NIF5002NT1 at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 165 mΩ.
- What is the operating junction temperature range of the NIF5002NT1?
The operating junction temperature range is -55°C to 150°C.
- Does the NIF5002NT1 come in Pb-Free packages?
- What are some common applications of the NIF5002NT1?
- What is the single pulse drain-to-source avalanche energy of the NIF5002NT1?
The single pulse drain-to-source avalanche energy (EAS) is 150 mJ.
- How does the NIF5002NT1 protect against high energy in avalanche mode?
The device features an integrated Drain-to-Gate clamp that enables it to withstand high energy in the avalanche mode.
- What is the slew rate control feature of the NIF5002NT1?
The device has slew rate control for low noise switching.
- What is the package type of the NIF5002NT1?
The package type is SOT-223-4 / TO-261-4D.
