Overview
The VNN1NV0413TR is a monolithic device designed in STMicroelectronics™ VIPower™ M0-3 Technology. It is intended to replace standard Power MOSFETs in applications ranging from DC to 50 KHz. This device is part of the OMNIFET II family, which is known for its fully autoprotected features. These protections include thermal shutdown, linear current limitation, and overvoltage clamp, ensuring the chip's safety in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin, providing diagnostic capabilities.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-source voltage (VINn=0 V) | VDSn | Internally clamped | V |
| Input voltage | VINn | Internally clamped | V |
| Input current | IINn | +/-20 mA | mA |
| Minimum input series impedance | RIN MINn | 330 Ω | Ω |
| Drain current | IDn | Internally limited | A |
| Reverse DC output current | IRn | -3 A | A |
| Electrostatic discharge (R=1.5 KΩ, C=100 pF) | VESD1 | 4000 V | V |
| Electrostatic discharge on output pins only (R=330 Ω, C=150 pF) | VESD2 | 16500 V | V |
| Total dissipation at Tc=25 °C | Ptot | 7 W (SOT-223), 8.3 W (SO-8), 35 W (DPAK) | W |
| Operating junction temperature | Tj | Internally limited | °C |
| Case operating temperature | Tc | Internally limited | °C |
| Storage temperature | Tstg | -55 to 150 °C | °C |
| Thermal resistance junction-case | Rthj-case | 18 °C/W (SOT-223), 3.5 °C/W (SO-8), 15 °C/W (DPAK) | °C/W |
| Thermal resistance junction-ambient | Rthj-amb | 70 °C/W (SOT-223), 65 °C/W (SO-8), 54 °C/W (DPAK) | °C/W |
| On-state resistance (per channel) | RON | 250 mΩ | mΩ |
| Current limitation (typical) | ILIMH | 1.7 A | A |
| Drain-source clamp voltage | VCLAMP | 40 V | V |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs
Applications
The VNN1NV0413TR is designed for use in various applications, particularly in the automotive sector. It is suitable for replacing standard Power MOSFETs in systems that require robust protection features such as thermal shutdown, linear current limitation, and overvoltage clamping. These devices are ideal for use in DC to 50 KHz applications, making them versatile for a range of power management and control systems.
Q & A
- What is the VNN1NV0413TR device?
The VNN1NV0413TR is a monolithic device designed in STMicroelectronics™ VIPower™ M0-3 Technology, intended to replace standard Power MOSFETs in various applications.
- What are the key protection features of the VNN1NV0413TR?
The device features thermal shutdown, linear current limitation, short circuit protection, and an integrated overvoltage clamp.
- How can fault feedback be detected in the VNN1NV0413TR?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What is the maximum drain-source voltage for the VNN1NV0413TR?
The drain-source voltage is internally clamped.
- What is the typical current limitation for the VNN1NV0413TR?
The typical current limitation is 1.7 A.
- What is the on-state resistance of the VNN1NV0413TR?
The on-state resistance is 250 mΩ per channel.
- What are the thermal resistance values for the different packages of the VNN1NV0413TR?
The thermal resistance junction-case values are 18 °C/W for SOT-223, 3.5 °C/W for SO-8, and 15 °C/W for DPAK.
- What is the storage temperature range for the VNN1NV0413TR?
The storage temperature range is -55 to 150 °C.
- In which applications is the VNN1NV0413TR commonly used?
The device is commonly used in automotive applications and other systems requiring robust power management and protection.
- What is the maximum total dissipation at Tc=25 °C for the different packages?
The maximum total dissipation is 7 W for SOT-223, 8.3 W for SO-8, and 35 W for DPAK.
