Overview
The VNB35NV04-E, part of the VNB35NV04TR-E series, is a monolithic device designed by STMicroelectronics using their VIPower M0-3 Technology. This device is intended to replace standard Power MOSFETs in applications ranging from DC to 25 kHz. It is particularly suited for automotive power distribution systems, including smart vehicle architectures with advanced functions. The device integrates several protection features to ensure robust operation in harsh environments.
Key Specifications
| Parameter | Value | Unit | Package |
|---|---|---|---|
| Drain-source voltage (VDS) | Internally clamped | V | PowerSO-10, D2PAK, TO-220 |
| Input voltage (VIN) | Internally clamped | V | PowerSO-10, D2PAK, TO-220 |
| Input current (IIN) | ±20 | mA | PowerSO-10, D2PAK, TO-220 |
| Drain current (ID) | Internally limited | A | PowerSO-10, D2PAK, TO-220 |
| Operating junction temperature (Tj) | Internally limited | °C | PowerSO-10, D2PAK, TO-220 |
| Storage temperature (Tstg) | -55 to 150 | °C | PowerSO-10, D2PAK, TO-220 |
| Thermal resistance junction-case (Rthj-case) | 1 | °C/W | PowerSO-10, D2PAK, TO-220 |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W | PowerSO-10, D2PAK, TO-220 |
| ESD protection (VESD1) | 4000 | V | PowerSO-10, D2PAK, TO-220 |
| ESD protection on output pin only (VESD2) | 16500 | V | PowerSO-10, D2PAK, TO-220 |
Key Features
- Linear current limitation: Limits the drain current to a specified value regardless of the input pin voltage.
- Thermal shutdown: Protects the device from overheating by shutting down when the junction temperature exceeds a certain threshold.
- Short circuit protection: Prevents damage from short circuits by limiting the current flow.
- Integrated clamp: Provides overvoltage protection by clamping the drain-source voltage to a safe level.
- Low current drawn from input pin: Minimizes the current required from the input pin, reducing power consumption.
- Diagnostic feedback through input pin: Allows fault detection by monitoring the voltage at the input pin.
- ESD protection: Protects the device from electrostatic discharge according to the Human Body model.
- Direct access to the gate of the Power MOSFET (analog driving): Enables analog driving of the Power MOSFET for precise control.
- Compatible with standard Power MOSFET: Can be used as a direct replacement for standard Power MOSFETs in many applications.
Applications
The VNB35NV04-E is designed for use in various automotive power distribution systems, including those with advanced smart vehicle architectures. It is particularly useful in applications requiring high reliability and robust protection features, such as:
- Automotive power distribution systems
- Smart vehicle architectures with zonal power distribution
- Replacement of traditional melting fuses in automotive systems
- Applications requiring high-frequency switching up to 25 kHz
Q & A
- What is the VNB35NV04-E designed for?
The VNB35NV04-E is designed to replace standard Power MOSFETs in automotive power distribution systems and other applications requiring high-frequency switching up to 25 kHz.
- What protection features does the VNB35NV04-E have?
The device includes linear current limitation, thermal shutdown, short circuit protection, integrated overvoltage clamp, and ESD protection.
- How does the diagnostic feedback work?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What are the package options for the VNB35NV04-E?
The device is available in D2PAK, TO-220, and PowerSO-10 packages.
- What is the operating junction temperature range for the VNB35NV04-E?
The operating junction temperature is internally limited, but the storage temperature range is -55 to 150°C.
- Does the VNB35NV04-E support analog driving?
Yes, it provides direct access to the gate of the Power MOSFET for analog driving.
- Is the VNB35NV04-E compatible with standard Power MOSFETs?
Yes, it is compatible with standard Power MOSFETs and can be used as a direct replacement in many applications.
- What is the thermal resistance junction-case for the VNB35NV04-E?
The thermal resistance junction-case (Rthj-case) is 1°C/W.
- What is the ESD protection level for the VNB35NV04-E?
The device has ESD protection according to the Human Body model, with a level of 4000 V.
- Can the VNB35NV04-E be used in high-frequency applications?
Yes, it is suitable for applications with switching frequencies up to 25 kHz.
