Overview
The VNB35NV04-E is a monolithic device designed by STMicroelectronics using their VIPower® M0-3 Technology. This device is intended to replace standard Power MOSFETs in applications ranging from DC to 25 kHz. It is part of the OMNIFET II family, which are fully autoprotected Power MOSFETs. The VNB35NV04-E is built to operate in harsh environments, offering robust protection features such as thermal shutdown, linear current limitation, and overvoltage clamp. It also provides diagnostic feedback through the input pin and is compatible with standard Power MOSFETs.
Key Specifications
| Parameter | Value | Unit | Package |
|---|---|---|---|
| Drain-source voltage (VDS) | Internally clamped | V | PowerSO-10, D2PAK, TO-220 |
| Input voltage (VIN) | Internally clamped | V | PowerSO-10, D2PAK, TO-220 |
| Input current (IIN) | +/-20 | mA | PowerSO-10, D2PAK, TO-220 |
| Drain current (ID) | Internally limited | A | PowerSO-10, D2PAK, TO-220 |
| Reverse DC output current (IR) | -30 | A | PowerSO-10, D2PAK, TO-220 |
| Electrostatic discharge (VESD1) | 4000 | V | PowerSO-10, D2PAK, TO-220 |
| Total dissipation at Tc = 25°C (Ptot) | 125 | W | PowerSO-10, D2PAK, TO-220 |
| Operating junction temperature (Tj) | Internally limited | °C | PowerSO-10, D2PAK, TO-220 |
| Storage temperature (Tstg) | -55 to 150 | °C | PowerSO-10, D2PAK, TO-220 |
| Thermal resistance junction-case (Rthj-case) | 1 | °C/W | PowerSO-10, D2PAK, TO-220 |
| Thermal resistance junction-ambient (Rthj-amb) | 50 | °C/W | PowerSO-10, D2PAK, TO-220 |
| Drain-source clamp voltage (VCLAMP) | 40-55 | V | PowerSO-10, D2PAK, TO-220 |
| Forward transconductance (gfs) | 35 | S | PowerSO-10, D2PAK, TO-220 |
Key Features
- Linear current limitation: Limits the drain current to a specified value regardless of the input pin voltage.
- Thermal shutdown: Protects the device from overheating by shutting down when the junction temperature exceeds a certain threshold.
- Short circuit protection: Prevents damage from short circuits by limiting the current and voltage.
- Integrated clamp: Provides overvoltage protection, especially important when driving inductive loads.
- Low current drawn from input pin: Minimizes the current required from the input pin.
- Diagnostic feedback through input pin: Allows for fault detection by monitoring the voltage at the input pin.
- ESD protection: Protects the device against electrostatic discharge according to the Human Body model.
- Direct access to the gate of the Power MOSFET (analog driving): Enables analog driving of the Power MOSFET.
- Compatible with standard Power MOSFETs: Can be used as a direct replacement for standard Power MOSFETs.
Applications
The VNB35NV04-E is suitable for a variety of applications, including:
- Automotive systems: Given its robust protection features and compatibility with harsh environments, it is ideal for automotive applications.
- Industrial power management: Useful in industrial settings where reliable power switching and protection are crucial.
- Power distribution systems: Can be used in power distribution systems that require high reliability and protection against overvoltage and short circuits.
- High-frequency switching applications: Suitable for applications up to 25 kHz, making it versatile for various high-frequency switching needs.
Q & A
- What is the VNB35NV04-E designed for?
The VNB35NV04-E is designed to replace standard Power MOSFETs in applications from DC to 25 kHz, using STMicroelectronics' VIPower® M0-3 Technology.
- What protection features does the VNB35NV04-E offer?
The device offers thermal shutdown, linear current limitation, short circuit protection, and overvoltage clamp protection.
- How does the VNB35NV04-E provide diagnostic feedback?
Diagnostic feedback can be detected by monitoring the voltage at the input pin.
- Is the VNB35NV04-E ESD protected?
- What are the typical packages available for the VNB35NV04-E?
The device is available in D2PAK, TO-220, and PowerSO-10 packages.
- What is the maximum drain current for the VNB35NV04-E?
The drain current is internally limited, but for specific values, refer to the datasheet for detailed electrical specifications.
- Can the VNB35NV04-E be driven by TTL logic circuits?
- What is the thermal resistance junction-ambient for the VNB35NV04-E?
The thermal resistance junction-ambient (Rthj-amb) is 50°C/W when mounted on a standard single-sided FR4 board.
- What is the storage temperature range for the VNB35NV04-E?
The storage temperature range is -55°C to 150°C.
- Is the VNB35NV04-E RoHS compliant?
