Overview
The TPS2551DBVRG4 is a current-limited, power-distribution switch from Texas Instruments, designed for applications where heavy capacitive loads and short-circuits are likely to be encountered. This device utilizes an N-channel MOSFET and is part of the TPS2550/51 series. It features adjustable current-limiting, fast overcurrent response, and built-in protection mechanisms such as overtemperature and reverse-voltage protection. The TPS2551DBVRG4 is particularly suited for use in USB ports, hubs, cell phones, laptops, and other devices that require robust power distribution and protection.
Key Specifications
| Parameter | Minimum | Typical | Maximum | Unit |
|---|---|---|---|---|
| Input Voltage (VIN) | 2.5 | - | 6.5 | V |
| Enable Voltage (VEN) | 0 | - | 6.5 | V |
| Continuous Output Current (IOUT) | 0 | - | 1.1 | A |
| Current-Limit Set Resistor (RILIM) | 14.3 | - | 80.6 | kΩ |
| Static Drain-Source On-State Resistance (rDS(on)) | 94 | 100 | 100 | mΩ (DBV package at TJ = 25°C) |
| Rise Time (tr) | 1.0 | 1.5 | - | ms (VIN = 6.5 V, CL = 1 μF, RL = 100 Ω) |
| Fall Time (tf) | 0.2 | 0.5 | - | ms (VIN = 6.5 V) |
| Maximum Junction Temperature (TJ) | -40 | - | 150 | °C |
| Thermal Shutdown Threshold | - | 155 | - | °C |
| ESD Protection (Human Body Model) | - | ±2000 | - | V |
Key Features
- Adjustable Current Limit: The current-limit threshold is user-adjustable between 100 mA and 1.1 A via an external resistor.
- Fast Overcurrent Response: Typical response time of 2 μs.
- High-Side MOSFET: 94-mΩ N-channel MOSFET in DBV package.
- Reverse Input-Output Voltage Protection: Prevents damage by turning off the MOSFET if the output voltage exceeds the input voltage by 135 mV.
- Operating Range: Input voltage range of 2.5 V to 6.5 V.
- Deglitched Fault Report: Internal delay circuitry to prevent false fault reporting.
- Low Standby Supply Current: Maximum of 1 μA.
- Built-in Soft-Start: Limits large current and voltage surges during startup.
- ESD Protection: Up to ±2000 V (Human Body Model) and ±500 V (Charged Device Model).
- Thermal Protection: Thermal shutdown and thermal cycling to protect against overtemperature conditions.
Applications
- USB Ports/Hubs: Ideal for self-powered and bus-powered hubs.
- Cell Phones: For power distribution and protection in mobile devices.
- Laptops: Suitable for power management in laptop systems.
- Heavy Capacitive Loads: Handles loads with high capacitance without compromising performance.
- Reverse-Voltage Protection: Protects against reverse voltage conditions in various applications.
Q & A
- What is the adjustable current-limit range of the TPS2551DBVRG4?
The current-limit threshold is adjustable between 100 mA and 1.1 A via an external resistor.
- What is the typical response time for overcurrent conditions?
The typical response time for overcurrent conditions is 2 μs.
- What is the static drain-source on-state resistance of the TPS2551DBVRG4 in the DBV package?
The static drain-source on-state resistance is 94 mΩ at TJ = 25°C.
- What is the input voltage range for the TPS2551DBVRG4?
The input voltage range is from 2.5 V to 6.5 V.
- Does the TPS2551DBVRG4 have built-in ESD protection?
Yes, it has ESD protection up to ±2000 V (Human Body Model) and ±500 V (Charged Device Model).
- How does the TPS2551DBVRG4 handle reverse-voltage conditions?
The device turns off the MOSFET if the output voltage exceeds the input voltage by 135 mV and asserts the FAULT output after a 4-ms deglitch time.
- What is the maximum junction temperature for the TPS2551DBVRG4?
The maximum junction temperature is 150°C.
- Does the TPS2551DBVRG4 have thermal protection features?
Yes, it includes thermal shutdown and thermal cycling to protect against overtemperature conditions.
- What is the purpose of the FAULT output in the TPS2551DBVRG4?
The FAULT output is asserted (active low) during overcurrent, overtemperature, or reverse-voltage conditions and remains asserted until the fault condition is removed.
- How does the TPS2551DBVRG4 handle standby power consumption?
The device has a maximum standby supply current of 1 μA.
