Overview
The VNP10N07-E is a monolithic device developed by STMicroelectronics using their VIPower Technology. It is designed to replace standard power MOSFETs in applications ranging from DC to 50 KHz. This device is particularly suited for harsh environments due to its built-in thermal shutdown, linear current limitation, and overvoltage clamp protections. The VNP10N07-E also provides diagnostic feedback through its input pin, allowing for the detection of fault conditions by monitoring the input voltage.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (Vds) | Internally Clamped | V |
| Input Voltage (Vin) | 18 | V |
| Drain Current (Id) | Internally Limited | A |
| Reverse DC Output Current (Ir) | -14 | A |
| Electrostatic Discharge (Vesd) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 50 | W |
| Operating Junction Temperature (Tj) | Internally Limited | °C |
| Case Operating Temperature (Tc) | Internally Limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-case (Rthj-case) | 2.5 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Static Drain-source On Resistance (Rds(on)) | 0.1 Ω (Typ.) | Ω |
| Input Threshold Voltage (Vin(th)) | 0.8 to 3 | V |
Key Features
- Standard TO-220 Package: Compatible with standard power MOSFET packages.
- ESD Protection: Human Body Model compliant.
- Diagnostic Feedback through Input Pin: Allows detection of fault conditions by monitoring the input voltage.
- Linear Current Limitation: Limits the drain current to prevent excessive power dissipation.
- Short Circuit Protection: Protects against short circuit conditions.
- Thermal Shut Down: Automatically shuts down the device in case of overtemperature.
- Low Current Drawn from Input Pin: Minimizes power consumption from the input pin.
- Direct Access to the Gate of the Power MOSFET (Analog Driving): Enables direct control of the MOSFET gate.
- Integrated Clamp: Provides overvoltage protection.
Applications
The VNP10N07-E is suitable for various industrial and motor drive and control applications. Its robust protection features and high reliability make it an ideal choice for environments where standard power MOSFETs may not suffice.
Q & A
- What is the VNP10N07-E used for?
The VNP10N07-E is used to replace standard power MOSFETs in applications ranging from DC to 50 KHz, particularly in harsh environments.
- What are the key protection features of the VNP10N07-E?
The device includes thermal shutdown, linear current limitation, overvoltage clamp, short circuit protection, and ESD protection.
- How does the VNP10N07-E provide diagnostic feedback?
The device provides diagnostic feedback through its input pin, allowing fault conditions to be detected by monitoring the input voltage.
- What is the maximum drain current of the VNP10N07-E?
The maximum drain current is internally limited to 10 A.
- What is the operating junction temperature range of the VNP10N07-E?
The operating junction temperature is internally limited, but the device shuts down at a minimum of 150°C and restarts when the temperature falls below 135°C.
- Is the VNP10N07-E compatible with standard power MOSFETs?
Yes, it is compatible with standard power MOSFETs and comes in a standard TO-220 package.
- What is the static drain-source on resistance of the VNP10N07-E?
The static drain-source on resistance (Rds(on)) is typically 0.1 Ω.
- Does the VNP10N07-E have ESD protection?
Yes, it has ESD protection according to the Human Body Model.
- Can the VNP10N07-E be driven by TTL logic circuits?
Yes, it can be driven by TTL logic circuits with a small increase in Rds(on).
- What are the typical applications of the VNP10N07-E?
The device is typically used in industrial and motor drive and control applications.
