Overview
The VNN1NV04TR-E is a monolithic device designed by STMicroelectronics using their VIPower M0-3 Technology. This OMNIFET II fully autoprotected Power MOSFET is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It is built with integrated protection features such as thermal shutdown, linear current limitation, and overvoltage clamp, making it robust in harsh environments. The device also provides diagnostic feedback through the input pin and offers low current draw from the input pin, enhancing its reliability and efficiency.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Max on-state resistance (per channel) | RON | 250 mΩ | mΩ |
Current limitation (typical) | ILIMH | 1.7 A | A |
Drain-source clamp voltage | VCLAMP | 40 V | V |
Input voltage | VIN | Internally clamped | V |
Input current | IIN | +/-20 mA | mA |
Minimum input series impedance | RIN | 330 Ω | Ω |
Drain current | ID | Internally limited | A |
Reverse DC output current | IR | -3 A | A |
Electrostatic discharge (Human Body Model) | VESD1 | 4000 V | V |
Operating junction temperature | Tj | Internally limited | °C |
Case operating temperature | Tc | Internally limited | °C |
Storage temperature | Tstg | -55 to 150 °C | °C |
Thermal resistance junction-case | Rthj-case | 18 °C/W | °C/W |
Thermal resistance junction-ambient | Rthj-amb | 70 °C/W | °C/W |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated overvoltage clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection according to Human Body Model
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs
Applications
The VNN1NV04TR-E is suitable for a variety of applications, including automotive systems, industrial control, and power management systems. It is particularly useful in environments where robust protection against overcurrent, overtemperature, and overvoltage is necessary. The device can be used in DC-DC converters, motor control circuits, and other power switching applications up to 50 kHz.
Q & A
- What is the maximum on-state resistance of the VNN1NV04TR-E?
The maximum on-state resistance is 250 mΩ. - What is the typical current limitation of the VNN1NV04TR-E?
The typical current limitation is 1.7 A. - What is the drain-source clamp voltage of the VNN1NV04TR-E?
The drain-source clamp voltage is 40 V. - Does the VNN1NV04TR-E have ESD protection?
Yes, it has ESD protection according to the Human Body Model. - What is the operating junction temperature range of the VNN1NV04TR-E?
The operating junction temperature is internally limited. - What are the common applications of the VNN1NV04TR-E?
It is used in automotive systems, industrial control, power management systems, DC-DC converters, and motor control circuits. - What is the thermal resistance junction-case of the VNN1NV04TR-E in SOT-223 package?
The thermal resistance junction-case is 18 °C/W. - Does the VNN1NV04TR-E provide diagnostic feedback?
Yes, it provides diagnostic feedback through the input pin. - What is the storage temperature range for the VNN1NV04TR-E?
The storage temperature range is -55 to 150 °C. - Is the VNN1NV04TR-E compatible with standard Power MOSFETs?
Yes, it is compatible with standard Power MOSFETs.