Overview
The VND1NV04-E is a monolithic device designed in STMicroelectronics® VIPower® M0-3 Technology. It is intended for replacement of standard Power MOSFETs in applications ranging from DC up to 50 KHz. This device is part of the OMNIFET II family, which features fully autoprotected Power MOSFETs. The VND1NV04-E is built to operate in harsh environments, providing robust protection mechanisms such as thermal shutdown, linear current limitation, and overvoltage clamp. It also offers diagnostic feedback through the input pin, making it a reliable choice for various automotive and industrial applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-source voltage | VDS | Internally clamped | V |
| Input voltage | VIN | Internally clamped | V |
| Input current | IIN | +/-20 mA | mA |
| Drain current | ID | Internally limited | A |
| Max on-state resistance (per channel) | RON | 250 mΩ | mΩ |
| Current limitation (typical) | ILIMH | 1.7 A | A |
| Drain-source clamp voltage | VCLAMP | 40 V | V |
| Operating junction temperature | Tj | Internally limited | °C |
| Case operating temperature | Tc | Internally limited | °C |
| Storage temperature | Tstg | -55 to 150 °C | °C |
| Thermal resistance junction-case | Rthj-case | 18 °C/W (SOT-223), 3.5 °C/W (SO-8), 70 °C/W (DPAK) | °C/W |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFET
Applications
The VND1NV04-E is suitable for a variety of applications, including automotive systems, industrial control systems, and any environment where robust and reliable power switching is required. It can replace standard Power MOSFETs in DC to 50 KHz applications, providing enhanced protection and diagnostic capabilities.
Q & A
- What is the maximum drain-source voltage of the VND1NV04-E?
The drain-source voltage is internally clamped.
- What is the typical current limitation of the VND1NV04-E?
The typical current limitation is 1.7 A.
- What are the key protection features of the VND1NV04-E?
The key protection features include linear current limitation, thermal shutdown, short circuit protection, and overvoltage clamp.
- How does the VND1NV04-E provide diagnostic feedback?
Diagnostic feedback is provided through the input pin, allowing for the detection of faults by monitoring the voltage at this pin.
- What is the operating junction temperature range of the VND1NV04-E?
The operating junction temperature is internally limited, but the device can operate within a case temperature range that is also internally limited.
- What are the package options available for the VND1NV04-E?
The device is available in TO-252 (DPAK), SOT-223, and SO-8 packages..
- Is the VND1NV04-E compatible with standard Power MOSFETs?
Yes, the VND1NV04-E is compatible with standard Power MOSFETs..
- What is the maximum on-state resistance of the VND1NV04-E?
The maximum on-state resistance is 250 mΩ..
- Does the VND1NV04-E have ESD protection?
Yes, the device includes ESD protection..
- What is the storage temperature range for the VND1NV04-E?
The storage temperature range is -55 to 150 °C..
