Overview
The STB9NK50ZT4 is a high-performance N-channel MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized using ST's strip-based PowerMESH™ layout, which significantly reduces on-resistance and enhances dv/dt capability. The STB9NK50ZT4 is designed for high current, high speed switching applications and is ideal for use in off-line power supplies, adaptors, and power factor correction (PFC) circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source Voltage (VDS) | 500 | V |
| Drain Current (continuous) at TC = 25°C | 7.2 | A |
| Drain Current (continuous) at TC = 100°C | 4.5 | A |
| Drain Current (pulsed) | 28.8 | A |
| Total Dissipation at TC = 25°C | 110 | W |
| Static Drain-source On Resistance (RDS(on)) | < 0.85 | Ω |
| Gate-source Voltage (VGS) | ± 30 | V |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
| Thermal Resistance Junction-case (Rthj-case) | 1.14 | °C/W |
| Thermal Resistance Junction-ambient (Rthj-amb) | 62.5 | °C/W |
| Operating Junction Temperature (Tj) | -55 to 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure reliability under high stress conditions.
- Minimized gate charge for efficient switching.
- Very low intrinsic capacitances to reduce switching losses.
- Integrated gate-source Zener diodes for enhanced ESD protection and to safely absorb voltage transients.
- Good manufacturing repeatability due to optimized PowerMESH™ layout.
Applications
- High current, high speed switching applications.
- Off-line power supplies.
- Adaptors.
- Power factor correction (PFC) circuits.
- Lighting systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB9NK50ZT4?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 7.2 A at 25°C and 4.5 A at 100°C.
- What is the typical static drain-source on resistance (RDS(on))?
The typical static drain-source on resistance (RDS(on)) is less than 0.85 Ω.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ± 30 V.
- What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case (Rthj-case) is 1.14 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150 °C.
- What is the purpose of the integrated gate-source Zener diodes?
The integrated gate-source Zener diodes enhance ESD protection and safely absorb voltage transients.
- What are some typical applications of the STB9NK50ZT4?
Typical applications include high current, high speed switching, off-line power supplies, adaptors, PFC circuits, and lighting systems.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- What is the single pulse avalanche energy (EAS) of the STB9NK50ZT4?
The single pulse avalanche energy (EAS) is 190 mJ.
