STB9NK60ZT4
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STMicroelectronics STB9NK60ZT4

Manufacturer No:
STB9NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 7A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB9NK60ZT4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of ST's STripFET F8 technology series, which features an enhanced trench gate structure. It is designed to offer superior performance in high-voltage applications, particularly in areas requiring high reliability and efficiency.

Key Specifications

ParameterValue
Voltage Rating (Vds)600V
Continuous Drain Current (Id)4.4A
Power Dissipation (Pd)125W
On-Resistance (Rds(on))0.85Ω
Package TypeD2PAK
ESD CapabilityImproved
Avalanche Testing100% tested
Intrinsic CapacitancesVery low

Key Features

  • Utilizes ST's STripFET F8 technology with an enhanced trench gate structure.
  • Extremely high dv/dt capability.
  • Improved ESD (Electrostatic Discharge) capability.
  • 100% avalanche tested for reliability.
  • Minimized gate charge for efficient switching.
  • Very low intrinsic capacitances for reduced switching losses.

Applications

The STB9NK60ZT4 is ideal for various high-voltage applications, including:

  • Flyback converters.
  • LED lighting systems.
  • Power supplies and switching circuits requiring high efficiency and reliability.

Q & A

  1. What is the voltage rating of the STB9NK60ZT4? The voltage rating (Vds) of the STB9NK60ZT4 is 600V.
  2. What is the continuous drain current of the STB9NK60ZT4? The continuous drain current (Id) is 4.4A.
  3. What technology does the STB9NK60ZT4 use? The STB9NK60ZT4 uses ST's STripFET F8 technology.
  4. What is the on-resistance (Rds(on)) of the STB9NK60ZT4? The on-resistance (Rds(on)) is 0.85Ω.
  5. Is the STB9NK60ZT4 ESD protected? Yes, the STB9NK60ZT4 has improved ESD capability.
  6. What type of testing has the STB9NK60ZT4 undergone for avalanche? The STB9NK60ZT4 has been 100% avalanche tested.
  7. What are the typical applications for the STB9NK60ZT4? Typical applications include flyback converters and LED lighting systems.
  8. What package type is the STB9NK60ZT4 available in? The STB9NK60ZT4 is available in the D2PAK package type.
  9. What is the power dissipation (Pd) of the STB9NK60ZT4? The power dissipation (Pd) is 125W.
  10. Does the STB9NK60ZT4 have low intrinsic capacitances? Yes, the STB9NK60ZT4 has very low intrinsic capacitances).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$3.30
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Same Series
STP9NK60Z
STP9NK60Z
MOSFET N-CH 600V 7A TO220AB
STP9NK60ZFP
STP9NK60ZFP
MOSFET N-CH 600V 7A TO220FP

Similar Products

Part Number STB9NK60ZT4 STB9NK70ZT4 STB4NK60ZT4 STB6NK60ZT4 STB9NK50ZT4 STB9NK60ZDT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Not For New Designs Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V 600 V 600 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 7.5A (Tc) 4A (Tc) 6A (Tc) 7.2A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.5A, 10V 1.2Ohm @ 4A, 10V 2Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V 850mOhm @ 3.6A, 10V 950mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 68 nC @ 10 V 26 nC @ 10 V 46 nC @ 10 V 32 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 1370 pF @ 25 V 510 pF @ 25 V 905 pF @ 25 V 910 pF @ 25 V 1110 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 125W (Tc) 115W (Tc) 70W (Tc) 110W (Tc) 110W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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