Overview
The STB4NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STB4NK60ZT4 is packaged in a D²PAK (TO-263) type B package and is 100% avalanche tested, ensuring high reliability and performance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 4 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 2.5 | A |
| Drain current (pulsed) (IDM) | 16 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 70 | W |
| On-resistance (RDS(on)) max. | 2 | Ω |
| Thermal resistance, junction-to-case (RthJC) | 1.79 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 35 | °C/W |
| Avalanche current, repetitive or not repetitive (IAR) | 4 | A |
| Single pulse avalanche energy (EAS) | 120 | mJ |
Key Features
- Zener-protected to enhance reliability and performance.
- 100% avalanche tested to ensure robustness against transient conditions.
- Very low intrinsic capacitance, reducing switching losses and improving efficiency.
- Minimized gate charge, facilitating faster switching times and lower power consumption.
- High dv/dt capability, making it suitable for demanding applications.
Applications
The STB4NK60ZT4 is primarily used in switching applications where high voltage and current handling are required. These include:
- Power supplies and converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB4NK60ZT4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STB4NK60ZT4?
The typical on-resistance (RDS(on)) is 1.7 Ω, but the maximum is 2 Ω.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 4 A.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.79 °C/W.
- What is the single pulse avalanche energy (EAS)?
The single pulse avalanche energy (EAS) is 120 mJ.
- What type of package does the STB4NK60ZT4 come in?
The STB4NK60ZT4 comes in a D²PAK (TO-263) type B package.
- What is the storage temperature range for the STB4NK60ZT4?
The storage temperature range is -55 to 150 °C.
- Is the STB4NK60ZT4 100% avalanche tested?
- What are the key applications of the STB4NK60ZT4?
The key applications include switching applications, power supplies, motor control, and high-frequency switching circuits.
- What is the gate-source voltage (VGS) range for the STB4NK60ZT4?
The gate-source voltage (VGS) range is ±30 V.
