Overview
The STB4NK60Z-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer enhanced performance and reliability in various high-power applications. The SuperMESH™ technology ensures a significant reduction in on-resistance and high dv/dt capability, making it suitable for demanding switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 4 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 2.5 | A |
| Pulsed drain current (IDM) | 16 | A |
| Total dissipation at TC = 25 °C (PTOT) | 70 | W |
| On-resistance (RDS(on)) max. | 2 Ω | Ω |
| Operating junction temperature range (Tj) | -55 to 150 | °C |
| Storage temperature range (Tstg) | -55 to 150 | °C |
| Thermal resistance junction-case (Rthj-case) | 1.79 | °C/W |
| Thermal resistance junction-ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected for enhanced ESD performance
- Available in I2PAK, D2PAK, IPAK, and DPAK packages
- ECOPACK® compliant for environmental sustainability
Applications
- Switching applications
- High-power electronic systems requiring high reliability and efficiency
- Industrial and automotive power management systems
- Power supplies and DC-DC converters
Q & A
- What is the maximum drain-source voltage of the STB4NK60Z-1?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STB4NK60Z-1?
The typical on-resistance (RDS(on)) is 1.7 Ω, with a maximum value of 2 Ω.
- What are the package options available for the STB4NK60Z-1?
The device is available in I2PAK, D2PAK, IPAK, and DPAK packages.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 4 A.
- What is the thermal resistance junction-case for the I2PAK and D2PAK packages?
The thermal resistance junction-case (Rthj-case) is 1.79 °C/W.
- Does the STB4NK60Z-1 have built-in ESD protection?
Yes, the device includes built-in back-to-back Zener diodes for enhanced ESD performance.
- What is the maximum pulse drain current?
The maximum pulse drain current (IDM) is 16 A.
- What is the total dissipation at 25 °C?
The total dissipation (PTOT) at 25 °C is 70 W.
- What are the operating and storage temperature ranges?
The operating and storage temperature ranges are -55 to 150 °C.
- Is the STB4NK60Z-1 environmentally compliant?
Yes, the device is available in ECOPACK® compliant packages, ensuring environmental sustainability.
