Overview
The STB6NK60Z-1 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is designed to offer extremely low on-resistance and high dv/dt capability, making it suitable for the most demanding applications. The SuperMESH™ technology optimizes the strip-based PowerMESH™ layout to achieve superior electrical characteristics.
The STB6NK60Z-1 is available in the I²PAK package and is characterized by its high drain-source breakdown voltage, low on-resistance, and high current handling capabilities. It also features integrated Zener diodes to enhance ESD protection and absorb voltage transients.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VDS) | 600 | V |
| On-Resistance (RDS(on)) | < 1.2 | Ω |
| Drain Current (ID) Continuous at TC = 25 °C | 6 | A |
| Drain Current (ID) Continuous at TC = 100 °C | 3.8 | A |
| Pulse Drain Current (IDM) | 24 | A |
| Total Dissipation at TC = 25 °C | 110 | W |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 1.14 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Avalanche Current (IAR) | 6 | A |
| Single Pulse Avalanche Energy (EAS) | 210 | mJ |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure robustness.
- Minimized gate charge for efficient switching.
- Integrated Zener diodes for enhanced ESD protection and to absorb voltage transients.
- Low on-resistance (RDS(on)) of less than 1.2 Ω.
- High current handling capability with a continuous drain current of 6 A at TC = 25 °C.
- Available in I²PAK package, which is lead-free and compliant with JEDEC Standard JESD97.
Applications
The STB6NK60Z-1 is designed for various high-power switching applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- High-frequency switching circuits.
- Aerospace and defense applications requiring high reliability.
- Industrial automation and control systems.
Q & A
- What is the maximum drain-source breakdown voltage of the STB6NK60Z-1?
The maximum drain-source breakdown voltage is 600 V.
- What is the on-resistance (RDS(on)) of the STB6NK60Z-1?
The on-resistance is less than 1.2 Ω.
- What is the continuous drain current at TC = 25 °C?
The continuous drain current at TC = 25 °C is 6 A.
- What is the thermal resistance junction-case (Rthj-case) of the STB6NK60Z-1?
The thermal resistance junction-case is 1.14 °C/W.
- Does the STB6NK60Z-1 have integrated ESD protection?
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- What is the single pulse avalanche energy (EAS) of the STB6NK60Z-1?
The single pulse avalanche energy is 210 mJ.
- In which package is the STB6NK60Z-1 available?
The STB6NK60Z-1 is available in the I²PAK package.
- Is the STB6NK60Z-1 suitable for high-frequency switching applications?
- What are some common applications of the STB6NK60Z-1?
