STB6NK60Z-1
  • Share:

STMicroelectronics STB6NK60Z-1

Manufacturer No:
STB6NK60Z-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 6A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB6NK60Z-1 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is designed to offer extremely low on-resistance and high dv/dt capability, making it suitable for the most demanding applications. The SuperMESH™ technology optimizes the strip-based PowerMESH™ layout to achieve superior electrical characteristics.

The STB6NK60Z-1 is available in the I²PAK package and is characterized by its high drain-source breakdown voltage, low on-resistance, and high current handling capabilities. It also features integrated Zener diodes to enhance ESD protection and absorb voltage transients.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VDS) 600 V
On-Resistance (RDS(on)) < 1.2 Ω
Drain Current (ID) Continuous at TC = 25 °C 6 A
Drain Current (ID) Continuous at TC = 100 °C 3.8 A
Pulse Drain Current (IDM) 24 A
Total Dissipation at TC = 25 °C 110 W
Gate-Source Voltage (VGS) ± 30 V
Thermal Resistance Junction-Case (Rthj-case) 1.14 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Maximum Lead Temperature for Soldering 300 °C
Avalanche Current (IAR) 6 A
Single Pulse Avalanche Energy (EAS) 210 mJ

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure robustness.
  • Minimized gate charge for efficient switching.
  • Integrated Zener diodes for enhanced ESD protection and to absorb voltage transients.
  • Low on-resistance (RDS(on)) of less than 1.2 Ω.
  • High current handling capability with a continuous drain current of 6 A at TC = 25 °C.
  • Available in I²PAK package, which is lead-free and compliant with JEDEC Standard JESD97.

Applications

The STB6NK60Z-1 is designed for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • High-frequency switching circuits.
  • Aerospace and defense applications requiring high reliability.
  • Industrial automation and control systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the STB6NK60Z-1?

    The maximum drain-source breakdown voltage is 600 V.

  2. What is the on-resistance (RDS(on)) of the STB6NK60Z-1?

    The on-resistance is less than 1.2 Ω.

  3. What is the continuous drain current at TC = 25 °C?

    The continuous drain current at TC = 25 °C is 6 A.

  4. What is the thermal resistance junction-case (Rthj-case) of the STB6NK60Z-1?

    The thermal resistance junction-case is 1.14 °C/W.

  5. Does the STB6NK60Z-1 have integrated ESD protection?
  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300 °C.

  7. What is the single pulse avalanche energy (EAS) of the STB6NK60Z-1?

    The single pulse avalanche energy is 210 mJ.

  8. In which package is the STB6NK60Z-1 available?

    The STB6NK60Z-1 is available in the I²PAK package.

  9. Is the STB6NK60Z-1 suitable for high-frequency switching applications?
  10. What are some common applications of the STB6NK60Z-1?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$0.65
607

Please send RFQ , we will respond immediately.

Same Series
STP6NK60Z
STP6NK60Z
MOSFET N-CH 600V 6A TO220AB
STP6NK60ZFP
STP6NK60ZFP
MOSFET N-CH 600V 6A TO220FP
STB6NK60Z-1
STB6NK60Z-1
MOSFET N-CH 600V 6A I2PAK

Similar Products

Part Number STB6NK60Z-1 STB4NK60Z-1
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 510 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10