STB6NK60Z-1
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STMicroelectronics STB6NK60Z-1

Manufacturer No:
STB6NK60Z-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 6A I2PAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STB6NK60Z-1 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is designed to offer extremely low on-resistance and high dv/dt capability, making it suitable for the most demanding applications. The SuperMESH™ technology optimizes the strip-based PowerMESH™ layout to achieve superior electrical characteristics.

The STB6NK60Z-1 is available in the I²PAK package and is characterized by its high drain-source breakdown voltage, low on-resistance, and high current handling capabilities. It also features integrated Zener diodes to enhance ESD protection and absorb voltage transients.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VDS) 600 V
On-Resistance (RDS(on)) < 1.2 Ω
Drain Current (ID) Continuous at TC = 25 °C 6 A
Drain Current (ID) Continuous at TC = 100 °C 3.8 A
Pulse Drain Current (IDM) 24 A
Total Dissipation at TC = 25 °C 110 W
Gate-Source Voltage (VGS) ± 30 V
Thermal Resistance Junction-Case (Rthj-case) 1.14 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W
Maximum Lead Temperature for Soldering 300 °C
Avalanche Current (IAR) 6 A
Single Pulse Avalanche Energy (EAS) 210 mJ

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure robustness.
  • Minimized gate charge for efficient switching.
  • Integrated Zener diodes for enhanced ESD protection and to absorb voltage transients.
  • Low on-resistance (RDS(on)) of less than 1.2 Ω.
  • High current handling capability with a continuous drain current of 6 A at TC = 25 °C.
  • Available in I²PAK package, which is lead-free and compliant with JEDEC Standard JESD97.

Applications

The STB6NK60Z-1 is designed for various high-power switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • High-frequency switching circuits.
  • Aerospace and defense applications requiring high reliability.
  • Industrial automation and control systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the STB6NK60Z-1?

    The maximum drain-source breakdown voltage is 600 V.

  2. What is the on-resistance (RDS(on)) of the STB6NK60Z-1?

    The on-resistance is less than 1.2 Ω.

  3. What is the continuous drain current at TC = 25 °C?

    The continuous drain current at TC = 25 °C is 6 A.

  4. What is the thermal resistance junction-case (Rthj-case) of the STB6NK60Z-1?

    The thermal resistance junction-case is 1.14 °C/W.

  5. Does the STB6NK60Z-1 have integrated ESD protection?
  6. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300 °C.

  7. What is the single pulse avalanche energy (EAS) of the STB6NK60Z-1?

    The single pulse avalanche energy is 210 mJ.

  8. In which package is the STB6NK60Z-1 available?

    The STB6NK60Z-1 is available in the I²PAK package.

  9. Is the STB6NK60Z-1 suitable for high-frequency switching applications?
  10. What are some common applications of the STB6NK60Z-1?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:905 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Same Series
STP6NK60Z
STP6NK60Z
MOSFET N-CH 600V 6A TO220AB
STP6NK60ZFP
STP6NK60ZFP
MOSFET N-CH 600V 6A TO220FP
STB6NK60Z-1
STB6NK60Z-1
MOSFET N-CH 600V 6A I2PAK

Similar Products

Part Number STB6NK60Z-1 STB4NK60Z-1
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3A, 10V 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 905 pF @ 25 V 510 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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