STP24N65M2
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STMicroelectronics STP24N65M2

Manufacturer No:
STP24N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 16A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP24N65M2 is a high-performance N-channel power MOSFET produced by STMicroelectronics. Although this component is currently obsolete and no longer manufactured, it was designed to offer robust and efficient power switching solutions. It features a high voltage rating and significant current handling capabilities, making it suitable for various high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Continuous Drain Current)16 A
RDS(on) (On-Resistance)Typically 0.24 Ω at VGS = 10 V, ID = 10 A
VGS(th) (Threshold Voltage)Typically 3.5 V at ID = 250 μA, VDS = 50 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageTO-220AB Tube

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 16 A, ensuring robust current handling.
  • Low on-resistance (RDS(on)) of typically 0.24 Ω at VGS = 10 V, ID = 10 A, enhancing efficiency.
  • Zener-protected and 100% avalanche tested, providing reliability and durability.
  • Ideal for applications such as flyback converters and LED lighting due to its high performance and robustness.

Applications

  • Flyback converters: The high voltage and current ratings make it suitable for flyback converter applications.
  • LED lighting: Its robustness and efficiency are beneficial for LED lighting systems.
  • Power supplies: Can be used in various power supply designs requiring high voltage and current handling.
  • Motor drives: Suitable for motor drive applications due to its high current and voltage capabilities.

Q & A

  1. What is the drain-source voltage rating of the STP24N65M2?
    The drain-source voltage rating is 650 V.
  2. What is the continuous drain current of the STP24N65M2?
    The continuous drain current is 16 A.
  3. What is the typical on-resistance of the STP24N65M2?
    The typical on-resistance is 0.24 Ω at VGS = 10 V, ID = 10 A.
  4. Is the STP24N65M2 still in production?
    No, the STP24N65M2 is obsolete and no longer manufactured.
  5. What are some common applications for the STP24N65M2?
    Common applications include flyback converters, LED lighting, power supplies, and motor drives.
  6. What package type is the STP24N65M2 available in?
    The STP24N65M2 is available in the TO-220AB tube package.
  7. What are the benefits of the Zener protection and avalanche testing in the STP24N65M2?
    These features enhance the reliability and durability of the MOSFET, protecting it against voltage spikes and ensuring robust operation under various conditions.
  8. Can the STP24N65M2 be used in automotive applications?
    While it is not specifically listed as an automotive-grade component, its robust specifications make it potentially suitable for some automotive applications, but it should be verified against specific automotive standards.
  9. What are some substitutes for the STP24N65M2?
    Substitutes such as the FCP13N60N from Flip Electronics can be considered.
  10. How does the STP24N65M2 compare to other MOSFETs in terms of efficiency?
    The STP24N65M2 offers low on-resistance and high current handling, making it efficient for high-power applications compared to other MOSFETs with similar specifications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STF24N65M2
STF24N65M2
MOSFET N-CH 650V 16A TO220FP
STB24N65M2
STB24N65M2
MOSFET N-CH 650V 16A D2PAK

Similar Products

Part Number STP24N65M2 STP28N65M2 STP24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 20A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 8A, 10V 180mOhm @ 10A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 35 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V 1440 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 170W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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