Overview
The STD4NK60Z-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. The STD4NK60Z-1 features a Zener-protected gate, minimizing gate charge and ensuring very low intrinsic capacitance. It is packaged in an IPAK package, which is convenient for various high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 4 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 2.5 | A |
| Drain current (pulsed) (IDM) | 16 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 70 | W |
| Gate-source ESD (HBM) | 3 kV | |
| Peak diode recovery voltage slope (dv/dt) | 4.5 | V/ns |
| Thermal resistance, junction-to-case (RthJC) | 1.79 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 100 | °C/W |
| Avalanche current (IAR) | 4 | A |
| Single pulse avalanche energy (EAS) | 120 | mJ |
| Static drain-source on-resistance (RDS(on)) | 1.76 Ω (typ.) | Ω |
| Gate threshold voltage (VGS(th)) | 3 to 4.5 | V |
Key Features
- Zener-protected gate to minimize gate charge and ensure very low intrinsic capacitance.
- 100% avalanche tested for reliability.
- Extremely high dv/dt capability, making it suitable for demanding applications.
- Gate charge minimized for efficient switching.
- Very low intrinsic capacitances.
- High level of dv/dt capability for the most demanding applications.
Applications
The STD4NK60Z-1 is primarily used in high-voltage switching applications where high reliability and efficiency are crucial. These include:
- Power supplies and DC-DC converters.
- Motor control and drives.
- High-frequency switching circuits.
- Industrial and automotive systems requiring high-power handling.
Q & A
- What is the maximum drain-source voltage of the STD4NK60Z-1?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STD4NK60Z-1?
The typical on-resistance (RDS(on)) is 1.76 Ω.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 4 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RthJC) is 1.79 °C/W.
- Is the STD4NK60Z-1 100% avalanche tested?
- What is the package type of the STD4NK60Z-1?
The STD4NK60Z-1 is packaged in an IPAK package.
- What is the gate-source ESD rating of the STD4NK60Z-1?
The gate-source ESD rating is 3 kV (HBM).
- What are the typical switching times for the STD4NK60Z-1?
The typical turn-on delay time (td(on)) is 12 ns, rise time (tr) is 9.5 ns, turn-off delay time (td(off)) is 29 ns, and fall time (tf) is 16.5 ns.
- What is the single pulse avalanche energy of the STD4NK60Z-1?
The single pulse avalanche energy (EAS) is 120 mJ.
- What are the primary applications of the STD4NK60Z-1?
The primary applications include high-voltage switching, power supplies, DC-DC converters, motor control, and high-frequency switching circuits.
