STD3NK60Z-1
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STMicroelectronics STD3NK60Z-1

Manufacturer No:
STD3NK60Z-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 2.4A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3NK60Z-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of STMicroelectronics' range of high-voltage MOSFETs, optimized for low on-resistance and high dv/dt capability, making it suitable for demanding applications. The STD3NK60Z-1 is available in the IPAK package and features integrated Zener diodes for enhanced ESD protection and to absorb voltage transients, eliminating the need for external components.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Drain Current (continuous) at TC = 25°C (ID) 2.4 A
Drain Current (continuous) at TC = 100°C (ID) 1.51 A
Pulsed Drain Current (IDM) 9.6 A
Total Dissipation at TC = 25°C (PTOT) 45 W
On-Resistance (RDS(on)) < 3.6 Ω Ω
Gate-Source ESD (VESD(G-S)) 2100 V
Peak Diode Recovery Voltage Slope (dv/dt) 4.5 V/ns
Operating Junction Temperature Range (Tj) -55 to 150 °C
Thermal Resistance Junction-Case (Rthj-case) 2.78 °C/W

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized for efficient switching.
  • Very low intrinsic capacitances.
  • Zener-protected gate-source to enhance ESD protection and absorb voltage transients.
  • Low on-resistance (RDS(on)) of less than 3.6 Ω.
  • High drain current of up to 2.4 A.
  • Total dissipation of 45 W at TC = 25°C.

Applications

  • High current, high speed switching applications.
  • Off-line power supplies and adaptors.
  • Power Factor Correction (PFC) circuits.
  • Lighting systems.
  • Switching applications requiring high dv/dt capability.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD3NK60Z-1?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STD3NK60Z-1?

    The typical on-resistance (RDS(on)) is less than 3.6 Ω.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 2.4 A.

  4. What is the pulsed drain current (IDM) of the STD3NK60Z-1?

    The pulsed drain current (IDM) is 9.6 A.

  5. What is the total dissipation (PTOT) at TC = 25°C?

    The total dissipation (PTOT) at TC = 25°C is 45 W.

  6. What is the operating junction temperature range (Tj) of the STD3NK60Z-1?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  7. Does the STD3NK60Z-1 have built-in ESD protection?

    Yes, it features integrated Zener diodes for enhanced ESD protection.

  8. What are the typical applications of the STD3NK60Z-1?

    Typical applications include high current, high speed switching, off-line power supplies, PFC circuits, and lighting systems.

  9. What package type is the STD3NK60Z-1 available in?

    The STD3NK60Z-1 is available in the IPAK package.

  10. What is the peak diode recovery voltage slope (dv/dt) of the STD3NK60Z-1?

    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:311 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number STD3NK60Z-1 STD3NK80Z-1 STD4NK60Z-1 STD2NK60Z-1 STD3NK50Z-1
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Not For New Designs Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 2.5A (Tc) 4A (Tc) 1.4A (Tc) 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V 4.5Ohm @ 1.25A, 10V 2Ohm @ 2A, 10V 8Ohm @ 700mA, 10V 3.3Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V 19 nC @ 10 V 26 nC @ 10 V 10 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 311 pF @ 25 V 485 pF @ 25 V 510 pF @ 25 V 170 pF @ 25 V 280 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package I-PAK TO-251 (IPAK) I-PAK I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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