STB3NK60ZT4
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STMicroelectronics STB3NK60ZT4

Manufacturer No:
STB3NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 2.4A D2PAK
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The STB3NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of a family of MOSFETs that include the STD3NK60Z-1, STD3NK60ZT4, STP3NK60Z, and STP3NK60ZFP, each available in different packages such as D2PAK, IPAK, DPAK, TO-220, and TO-220FP. The STB3NK60ZT4 is designed to offer high performance and reliability in various high-voltage applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 3.6 Ω (max) Ω
ID (Drain Current) 2.4 A A
Tj (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C
Rthj-case (Thermal Resistance Junction-Case) 2.78 °C/W
Rthj-amb (Thermal Resistance Junction-Ambient) 62.5 °C/W
IAR (Avalanche Current) 2.4 A A
EAS (Single Pulse Avalanche Energy) 150 mJ mJ
Package D2PAK

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure robustness against high-energy pulses.
  • Gate charge minimized for efficient switching.
  • Very low intrinsic capacitance, reducing switching losses.
  • Zener-protected gate-source diode for enhanced ESD performance and device integrity protection.

Applications

The STB3NK60ZT4 is designed for various high-voltage switching applications, including but not limited to:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STB3NK60ZT4?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STB3NK60ZT4?

    The typical on-resistance (RDS(on)) is 3.2 Ω, with a maximum of 3.6 Ω.

  3. What is the maximum drain current (ID) of the STB3NK60ZT4?

    The maximum drain current (ID) is 2.4 A.

  4. What is the operating junction temperature range of the STB3NK60ZT4?

    The operating junction temperature range is -55 to 150 °C.

  5. What package types are available for the STB3NK60ZT4 and its variants?

    The devices are available in D2PAK, IPAK, DPAK, TO-220, and TO-220FP packages.

  6. What is the thermal resistance junction-case (Rthj-case) for the D2PAK package?

    The thermal resistance junction-case (Rthj-case) for the D2PAK package is 2.78 °C/W.

  7. Does the STB3NK60ZT4 have built-in protection against ESD?
  8. What is the single pulse avalanche energy (EAS) of the STB3NK60ZT4?

    The single pulse avalanche energy (EAS) is 150 mJ.

  9. What are some typical applications for the STB3NK60ZT4?

    Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

  10. Is the STB3NK60ZT4 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:311 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP3NK60Z
STP3NK60Z
MOSFET N-CH 600V 2.4A TO220AB
STP3NK60ZFP
STP3NK60ZFP
MOSFET N-CH 600V 2.4A TO220FP
STD3NK60ZT4
STD3NK60ZT4
MOSFET N-CH 600V 2.4A DPAK
STD3NK60Z-1
STD3NK60Z-1
MOSFET N-CH 600V 2.4A IPAK

Similar Products

Part Number STB3NK60ZT4 STB4NK60ZT4 STB6NK60ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V 2Ohm @ 2A, 10V 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V 26 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 311 pF @ 25 V 510 pF @ 25 V 905 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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