Overview
The STB3NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of a family of MOSFETs that include the STD3NK60Z-1, STD3NK60ZT4, STP3NK60Z, and STP3NK60ZFP, each available in different packages such as D2PAK, IPAK, DPAK, TO-220, and TO-220FP. The STB3NK60ZT4 is designed to offer high performance and reliability in various high-voltage applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VDS (Drain-Source Voltage) | 600 | V |
RDS(on) (On-Resistance) | 3.6 Ω (max) | Ω |
ID (Drain Current) | 2.4 A | A |
Tj (Operating Junction Temperature) | -55 to 150 | °C |
Tstg (Storage Temperature) | -55 to 150 | °C |
Rthj-case (Thermal Resistance Junction-Case) | 2.78 | °C/W |
Rthj-amb (Thermal Resistance Junction-Ambient) | 62.5 | °C/W |
IAR (Avalanche Current) | 2.4 A | A |
EAS (Single Pulse Avalanche Energy) | 150 mJ | mJ |
Package | D2PAK |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure robustness against high-energy pulses.
- Gate charge minimized for efficient switching.
- Very low intrinsic capacitance, reducing switching losses.
- Zener-protected gate-source diode for enhanced ESD performance and device integrity protection.
Applications
The STB3NK60ZT4 is designed for various high-voltage switching applications, including but not limited to:
- Power supplies and converters.
- Motor control and drives.
- Industrial automation and control systems.
- High-voltage DC-DC converters.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB3NK60ZT4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STB3NK60ZT4?
The typical on-resistance (RDS(on)) is 3.2 Ω, with a maximum of 3.6 Ω.
- What is the maximum drain current (ID) of the STB3NK60ZT4?
The maximum drain current (ID) is 2.4 A.
- What is the operating junction temperature range of the STB3NK60ZT4?
The operating junction temperature range is -55 to 150 °C.
- What package types are available for the STB3NK60ZT4 and its variants?
The devices are available in D2PAK, IPAK, DPAK, TO-220, and TO-220FP packages.
- What is the thermal resistance junction-case (Rthj-case) for the D2PAK package?
The thermal resistance junction-case (Rthj-case) for the D2PAK package is 2.78 °C/W.
- Does the STB3NK60ZT4 have built-in protection against ESD?
- What is the single pulse avalanche energy (EAS) of the STB3NK60ZT4?
The single pulse avalanche energy (EAS) is 150 mJ.
- What are some typical applications for the STB3NK60ZT4?
Typical applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.
- Is the STB3NK60ZT4 100% avalanche tested?