Overview
The STD3NK80Z-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is part of the MDmesh and SuperMESH series, known for their optimized performance and reliability. The STD3NK80Z-1 is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for the most demanding applications. It features a Zener-protected gate to improve ESD performance and eliminate the need for additional external components.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS (Drain-source voltage) | - | - | - | 800 | V |
| VGS (Gate-source voltage) | - | - | - | ±30 | V |
| ID (Drain current, continuous) | TC = 25 °C | - | - | 2.5 | A |
| ID (Drain current, continuous) | TC = 100 °C | - | - | 1.57 | A |
| IDM (Drain current, pulsed) | Pulse duration = 300 μs, duty cycle 1.5% | - | - | 10 | A |
| PTOT (Total dissipation) | TC = 25 °C | - | - | 70 | W |
| V(BR)DSS (Drain-source breakdown voltage) | VGS = 0 V, ID = 1 mA | - | - | 800 | V |
| VGS(th) (Gate threshold voltage) | VDS = VGS, ID = 50 µA | 3 | 3.75 | 4.5 | V |
| RDS(on) (Static drain-source on resistance) | VGS = 10 V, ID = 1.25 A | 3.8 | - | 4.5 | Ω |
| TJ (Junction temperature) | - | -55 | - | 150 | °C |
Key Features
- Zener-protected gate: Enhances ESD performance and eliminates the need for additional external components.
- High dv/dt capability: Designed to handle high voltage slopes, making it suitable for demanding applications.
- Low on-resistance: Typical RDS(on) of 3.8 Ω, reducing power losses.
- Gate charge minimized: Low gate charge reduces switching losses and improves efficiency.
- 100% avalanche tested: Ensures robustness and reliability under high stress conditions.
- Low intrinsic capacitance: Reduces switching times and improves overall performance.
Applications
- Switching applications: Suitable for high-frequency switching in power supplies, motor control, and other high-power applications.
- Power management systems: Can be used in various power management systems requiring high voltage and current handling capabilities.
- Industrial and automotive systems: Applicable in industrial and automotive environments where high reliability and performance are critical.
Q & A
- What is the maximum drain-source voltage of the STD3NK80Z-1?
The maximum drain-source voltage is 800 V.
- What is the typical on-resistance of the STD3NK80Z-1?
The typical on-resistance is 3.8 Ω).
- What is the maximum continuous drain current of the STD3NK80Z-1?
The maximum continuous drain current is 2.5 A at TC = 25 °C).
- What is the gate threshold voltage range of the STD3NK80Z-1?
The gate threshold voltage range is from 3 V to 4.5 V).
- What is the maximum operating temperature of the STD3NK80Z-1?
The maximum operating temperature is +150 °C).
- What is the package type of the STD3NK80Z-1?
The package type is IPAK (TO-251)).
- Does the STD3NK80Z-1 have built-in Zener diodes for ESD protection?
Yes, it has built-in back-to-back Zener diodes to enhance ESD performance).
- What are the typical applications of the STD3NK80Z-1?
Typical applications include switching applications, power management systems, and industrial and automotive systems).
- What is the maximum power dissipation of the STD3NK80Z-1?
The maximum power dissipation is 70 W at TC = 25 °C).
- Is the STD3NK80Z-1 100% avalanche tested?
Yes, the device is 100% avalanche tested).
