Overview
The STF14NM50N, along with its variants STI14NM50N and STP14NM50N, are N-channel Power MOSFETs developed by STMicroelectronics using the second generation of MDmesh™ technology. These devices are renowned for their low on-resistance and gate charge, making them highly suitable for high-efficiency converters. Available in TO-220FP, I²PAK, and TO-220 packages, these MOSFETs are designed to meet the demands of various high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 500 | V |
| Gate-Source Voltage (VGS) | ± 25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 12 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 8 | A |
| Pulsed Drain Current (IDM) | 48 | A |
| Total Dissipation at TC = 25 °C | 90 | W |
| Peak Diode Recovery Voltage Slope (dv/dt) | 15 | V/ns |
| Insulation Withstand Voltage (VISO) | 2500 | V |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Maximum Operating Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 5 (TO-220FP), 1.39 (I²PAK), 5 (TO-220) | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) | 0.28 (typ.), 0.32 (max.) | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Vertical structure combined with strip layout for low on-resistance and gate charge
- High efficiency in high-performance converters
- Available in ECOPACK® packages for environmental compliance
Applications
The STF14NM50N, STI14NM50N, and STP14NM50N are ideal for various switching applications, particularly in high-efficiency converters where low on-resistance and gate charge are critical. These include but are not limited to:
- Power supplies
- Motor control systems
- High-frequency switching circuits
- Industrial and automotive electronics
Q & A
- What is the maximum drain-source voltage (VDS) for the STF14NM50N?
The maximum drain-source voltage (VDS) is 500 V. - What are the typical and maximum values of the static drain-source on-resistance (RDS(on))?
The typical value is 0.28 Ω, and the maximum value is 0.32 Ω. - What is the continuous drain current (ID) at TC = 25 °C and TC = 100 °C?
The continuous drain current (ID) is 12 A at TC = 25 °C and 8 A at TC = 100 °C. - What is the maximum operating junction temperature (Tj)?
The maximum operating junction temperature (Tj) is 150 °C. - What are the thermal resistance values for junction-case and junction-ambient?
The thermal resistance junction-case (Rthj-case) is 5 °C/W for TO-220FP and TO-220, and 1.39 °C/W for I²PAK. The thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W. - What are the key features of the MDmesh™ II technology used in these MOSFETs?
The MDmesh™ II technology combines a vertical structure with a strip layout, resulting in low on-resistance and gate charge, making it suitable for high-efficiency converters. - In which packages are the STF14NM50N, STI14NM50N, and STP14NM50N available?
These MOSFETs are available in TO-220FP, I²PAK, and TO-220 packages. - What is the insulation withstand voltage (VISO) for these devices?
The insulation withstand voltage (VISO) is 2500 V. - Are these devices environmentally compliant?
Yes, these devices are available in ECOPACK® packages, which meet various levels of environmental compliance. - What are some typical applications for these MOSFETs?
These MOSFETs are typically used in power supplies, motor control systems, high-frequency switching circuits, and industrial and automotive electronics.
