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STF11NM50N
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STMicroelectronics STF11NM50N

Manufacturer No:
STF11NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 8.5A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the MDmesh II family, known for its advanced technology that combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 500 V
RDS(on) (On-Resistance) 400 mΩ (typ.)
ID (Drain Current) 8.5 A
Ptot (Total Power Dissipation) Varies by package (e.g., TO-220FP, DPAK)
TJ (Junction Temperature) -55°C to 150°C
Package TO-220FP, DPAK

Key Features

  • Low on-resistance (RDS(on)) of 400 mΩ (typ.)
  • High drain current (ID) of 8.5 A
  • High voltage rating (VDS) of 500 V
  • MDmesh II technology for improved performance and efficiency
  • Avaliable in TO-220FP and DPAK packages for various application needs

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and commercial power systems
  • Aerospace and defense applications
  • Automotive systems (where applicable)

Q & A

  1. What is the maximum drain-source voltage of the STF11NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance of the STF11NM50N?

    The typical on-resistance (RDS(on)) is 400 mΩ.

  3. What is the maximum drain current of the STF11NM50N?

    The maximum drain current (ID) is 8.5 A.

  4. In which packages is the STF11NM50N available?

    The STF11NM50N is available in TO-220FP and DPAK packages.

  5. What technology does the STF11NM50N use?

    The STF11NM50N uses MDmesh II technology.

  6. What are some common applications for the STF11NM50N?

    Common applications include power supplies, motor control, industrial and commercial power systems, aerospace, and defense.

  7. What is the junction temperature range for the STF11NM50N?

    The junction temperature range is -55°C to 150°C.

  8. How does the MDmesh II technology benefit the STF11NM50N?

    The MDmesh II technology provides low on-resistance and gate charge, enhancing the device's efficiency and performance.

  9. Is the STF11NM50N suitable for automotive applications?

    While it can be used in some automotive contexts, it is not specifically automotive-grade. For automotive-grade options, other models like the STD14NM50NAG should be considered.

  10. Where can I find detailed specifications for the STF11NM50N?

    Detailed specifications can be found on STMicroelectronics' official website and in the datasheet available for download.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:547 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STD11NM50N
STD11NM50N
MOSFET N-CH 500V 8.5A DPAK

Similar Products

Part Number STF11NM50N STF14NM50N STF19NM50N STF21NM50N STF12NM50N STF11NM60N STF13NM50N STF16NM50N STF10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V 600 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 12A (Tc) 14A (Tc) 18A (Tc) 11A (Tc) 10A (Tc) 12A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 470mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V 250mOhm @ 7A, 10V 190mOhm @ 9A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 320mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 65 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 30 nC @ 10 V 38 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 547 pF @ 50 V 816 pF @ 50 V 1000 pF @ 50 V 1950 pF @ 25 V 940 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 1200 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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