STF11NM50N
  • Share:

STMicroelectronics STF11NM50N

Manufacturer No:
STF11NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 8.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF11NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the MDmesh II family, known for its advanced technology that combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 500 V
RDS(on) (On-Resistance) 400 mΩ (typ.)
ID (Drain Current) 8.5 A
Ptot (Total Power Dissipation) Varies by package (e.g., TO-220FP, DPAK)
TJ (Junction Temperature) -55°C to 150°C
Package TO-220FP, DPAK

Key Features

  • Low on-resistance (RDS(on)) of 400 mΩ (typ.)
  • High drain current (ID) of 8.5 A
  • High voltage rating (VDS) of 500 V
  • MDmesh II technology for improved performance and efficiency
  • Avaliable in TO-220FP and DPAK packages for various application needs

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and commercial power systems
  • Aerospace and defense applications
  • Automotive systems (where applicable)

Q & A

  1. What is the maximum drain-source voltage of the STF11NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance of the STF11NM50N?

    The typical on-resistance (RDS(on)) is 400 mΩ.

  3. What is the maximum drain current of the STF11NM50N?

    The maximum drain current (ID) is 8.5 A.

  4. In which packages is the STF11NM50N available?

    The STF11NM50N is available in TO-220FP and DPAK packages.

  5. What technology does the STF11NM50N use?

    The STF11NM50N uses MDmesh II technology.

  6. What are some common applications for the STF11NM50N?

    Common applications include power supplies, motor control, industrial and commercial power systems, aerospace, and defense.

  7. What is the junction temperature range for the STF11NM50N?

    The junction temperature range is -55°C to 150°C.

  8. How does the MDmesh II technology benefit the STF11NM50N?

    The MDmesh II technology provides low on-resistance and gate charge, enhancing the device's efficiency and performance.

  9. Is the STF11NM50N suitable for automotive applications?

    While it can be used in some automotive contexts, it is not specifically automotive-grade. For automotive-grade options, other models like the STD14NM50NAG should be considered.

  10. Where can I find detailed specifications for the STF11NM50N?

    Detailed specifications can be found on STMicroelectronics' official website and in the datasheet available for download.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:547 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.04
235

Please send RFQ , we will respond immediately.

Same Series
STD11NM50N
STD11NM50N
MOSFET N-CH 500V 8.5A DPAK

Similar Products

Part Number STF11NM50N STF14NM50N STF19NM50N STF21NM50N STF12NM50N STF11NM60N STF13NM50N STF16NM50N STF10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V 600 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 12A (Tc) 14A (Tc) 18A (Tc) 11A (Tc) 10A (Tc) 12A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 470mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V 250mOhm @ 7A, 10V 190mOhm @ 9A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 320mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 65 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 30 nC @ 10 V 38 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 547 pF @ 50 V 816 pF @ 50 V 1000 pF @ 50 V 1950 pF @ 25 V 940 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 1200 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP