STF11NM50N
  • Share:

STMicroelectronics STF11NM50N

Manufacturer No:
STF11NM50N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 8.5A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF11NM50N is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the MDmesh II family, known for its advanced technology that combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly efficient for various power management applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 500 V
RDS(on) (On-Resistance) 400 mΩ (typ.)
ID (Drain Current) 8.5 A
Ptot (Total Power Dissipation) Varies by package (e.g., TO-220FP, DPAK)
TJ (Junction Temperature) -55°C to 150°C
Package TO-220FP, DPAK

Key Features

  • Low on-resistance (RDS(on)) of 400 mΩ (typ.)
  • High drain current (ID) of 8.5 A
  • High voltage rating (VDS) of 500 V
  • MDmesh II technology for improved performance and efficiency
  • Avaliable in TO-220FP and DPAK packages for various application needs

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and commercial power systems
  • Aerospace and defense applications
  • Automotive systems (where applicable)

Q & A

  1. What is the maximum drain-source voltage of the STF11NM50N?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the typical on-resistance of the STF11NM50N?

    The typical on-resistance (RDS(on)) is 400 mΩ.

  3. What is the maximum drain current of the STF11NM50N?

    The maximum drain current (ID) is 8.5 A.

  4. In which packages is the STF11NM50N available?

    The STF11NM50N is available in TO-220FP and DPAK packages.

  5. What technology does the STF11NM50N use?

    The STF11NM50N uses MDmesh II technology.

  6. What are some common applications for the STF11NM50N?

    Common applications include power supplies, motor control, industrial and commercial power systems, aerospace, and defense.

  7. What is the junction temperature range for the STF11NM50N?

    The junction temperature range is -55°C to 150°C.

  8. How does the MDmesh II technology benefit the STF11NM50N?

    The MDmesh II technology provides low on-resistance and gate charge, enhancing the device's efficiency and performance.

  9. Is the STF11NM50N suitable for automotive applications?

    While it can be used in some automotive contexts, it is not specifically automotive-grade. For automotive-grade options, other models like the STD14NM50NAG should be considered.

  10. Where can I find detailed specifications for the STF11NM50N?

    Detailed specifications can be found on STMicroelectronics' official website and in the datasheet available for download.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:547 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
0 Remaining View Similar

In Stock

$3.04
235

Please send RFQ , we will respond immediately.

Same Series
STD11NM50N
STD11NM50N
MOSFET N-CH 500V 8.5A DPAK

Similar Products

Part Number STF11NM50N STF14NM50N STF19NM50N STF21NM50N STF12NM50N STF11NM60N STF13NM50N STF16NM50N STF10NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V 600 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 12A (Tc) 14A (Tc) 18A (Tc) 11A (Tc) 10A (Tc) 12A (Tc) 15A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 470mOhm @ 4.5A, 10V 320mOhm @ 6A, 10V 250mOhm @ 7A, 10V 190mOhm @ 9A, 10V 380mOhm @ 5.5A, 10V 450mOhm @ 5A, 10V 320mOhm @ 6A, 10V 260mOhm @ 7.5A, 10V 630mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 27 nC @ 10 V 34 nC @ 10 V 65 nC @ 10 V 30 nC @ 10 V 31 nC @ 10 V 30 nC @ 10 V 38 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 547 pF @ 50 V 816 pF @ 50 V 1000 pF @ 50 V 1950 pF @ 25 V 940 pF @ 50 V 850 pF @ 50 V 960 pF @ 50 V 1200 pF @ 50 V 450 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 30W (Tc) 30W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 30W (Tc) 25W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223